Abstract:<p>We use molecular dynamics (MD) methods to study collision cascades in cubic silicon carbide (3C-SiC), which is a candidate for various applications in nuclear industries. One Tersoff potential, which can reproduce the thermal and elastic properties of 3C-SiC, was firstly connected with ZBL potential. Collison cascades were generated by primary knock-on atoms (PKA) with damage energies ranging between 1 keV and 10 keV at 300-1800 K. It was found that the temperature weakly influence the production of defects in the temperature range (300-1800 K). However, the number of point defects increases significantly as the PKA-energy increases. Carbon defects dominate most of the defects formed in collision cascades, and the dominance becomes less significant with the increase of temperature. Some high-density interstitial point defects were observed in the evolution of the collision cascade. As the PKA-energy increases, more and more defect clusters with larger sizes can be observed. For the current PKA energy range (≤ 10 keV), clusters with 1∼5 vacancies and with 1∼4 interstitials can be found, and clusters with a larger size are rare at the end of the quenching stage. The number of these defect clusters with various sizes is temperature independent. In these defect clusters, the carbon content exceeds 50% in most conditions. In addition, the carbon ratio in interstitial clusters is usually higher than the carbon site ratio in vacancy clusters. This work not only enriches the knowledge of the the number, size distribution and compositions of point defects and their clusters induced by neutron irradiation, but also can be input for the long-term simulation methods to understand the evolution of irradiated defects in 3C-SiC. Furthermore, the defect information can be used to study the thermal and elastic properties of 3C-SiC in future work.</p>

Annealing mechanisms of intrinsic defects in 3C-SiC: a theoretical study

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Interaction of irradiation-induced point defects with transmutants (H, He, Li, Be, B, Mg, Al and P) in 3C-SiC ceramics

Annealing Behaviour of Defects in Neutron Transmutation Doped Silicon

Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC

Accelerated atomistic simulation study on the stability and mobility of carbon tri-interstitial cluster in cubic SiC

Molecular dynamics simulation of displacement cascades in cubic silicon carbide

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

First-principles investigation of the intrinsic defects in Ti3SiC2

Release behavior of an interstitial helium atom from 3 C -SiC(100) subsurface: A first-principles study

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Vacancy Effects on the Formation of He and Kr Cavities in 3C-Sic Irradiated and Annealed at Elevated Temperatures

Effects of point defects on oxidation of 3C-SiC

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC