Abstract:<p>We use molecular dynamics (MD) methods to study collision cascades in cubic silicon carbide (3C-SiC), which is a candidate for various applications in nuclear industries. One Tersoff potential, which can reproduce the thermal and elastic properties of 3C-SiC, was firstly connected with ZBL potential. Collison cascades were generated by primary knock-on atoms (PKA) with damage energies ranging between 1 keV and 10 keV at 300-1800 K. It was found that the temperature weakly influence the production of defects in the temperature range (300-1800 K). However, the number of point defects increases significantly as the PKA-energy increases. Carbon defects dominate most of the defects formed in collision cascades, and the dominance becomes less significant with the increase of temperature. Some high-density interstitial point defects were observed in the evolution of the collision cascade. As the PKA-energy increases, more and more defect clusters with larger sizes can be observed. For the current PKA energy range (≤ 10 keV), clusters with 1∼5 vacancies and with 1∼4 interstitials can be found, and clusters with a larger size are rare at the end of the quenching stage. The number of these defect clusters with various sizes is temperature independent. In these defect clusters, the carbon content exceeds 50% in most conditions. In addition, the carbon ratio in interstitial clusters is usually higher than the carbon site ratio in vacancy clusters. This work not only enriches the knowledge of the the number, size distribution and compositions of point defects and their clusters induced by neutron irradiation, but also can be input for the long-term simulation methods to understand the evolution of irradiated defects in 3C-SiC. Furthermore, the defect information can be used to study the thermal and elastic properties of 3C-SiC in future work.</p>

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Theoretical Study on the Improvement of the Doping Efficiency of Al in 4H-Sic by Co-Doping Group-Ivb Elements

Annealing mechanisms of intrinsic defects in 3C-SiC: a theoretical study

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Effects of point defects on oxidation of 3C-SiC

First-principle calculation study of intrinsic point defects and doping performance of MoSi 2 N 4

Molecular dynamics simulation of displacement cascades in cubic silicon carbide

Primary Radiation Damage in 3C-Sic under Strain Field Studied with Molecular Dynamics Simulation

Interaction of irradiation-induced point defects with transmutants (H, He, Li, Be, B, Mg, Al and P) in 3C-SiC ceramics

Deformation of 4H-SiC: The role of dopants

Al-implantation induced damage in 4H-SiC

Thermal transport mechanism of AlN/SiG/3C-SiC typical heterostructures

Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films

Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC

Aluminum Doping Property in SiC Epilayers Grown at High Growth Rate Using Chloride-Based CVD