On the experimental properties of the TS defect in 4H-SiC

Johannes A. F. Lehmeyer,Alexander D. Fuchs,Zhengming Li,Titus Bornträger,Fabio Candolfi,Maximilian Schober,Marcus Fischer,Martin Hartmann,Elke Neu,Michel Bockstedte,Michael Krieger,Heiko B. Weber
2024-04-15
Abstract:When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect level. They reveal that the three occurring spectral signatures TS1, TS2 and TS3 originate from one single defect. Their polarization dependences expose three different crystallographic orientations in the basal plane, which relate to the projections of the nearest neighbor directions. Accordingly, we find a three-fold level-splitting in ensemble studies, when applying mechanical strain. This dependency is quantitatively calibrated. A complementary electrical measurement, deep level transient spectroscopy, reveals a charge transition level of the TS defect at 0.6 eV above the valence band. For a future identification, this accurate characterization of its optical and electronic properties along with their response to mechanical strain is a milestone.
Applied Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to gain an in - depth understanding of the physical properties of TS defects in 4H - SiC (silicon carbide), especially the responses of its optical and electronic properties under different stimuli. Specifically: 1. **Origin and Characteristics of TS Defects**: - Research on the photoluminescence (PL) characteristics of TS defects, especially the analysis at the single - defect level at low temperatures. - Explore whether the three spectral features of TS defects (TS1, TS2, TS3) originate from the same defect and explain their polarization dependence. 2. **Effect of Mechanical Strain**: - Quantify the spectral splitting behavior of TS defects under mechanical strain and calibrate the relationship between these splittings and the strain direction. - Analyze the effect of strain in different crystal orientations on the spectral lines of TS defects and reveal their triple - splitting phenomenon. 3. **Charge - Transition Energy Levels**: - Through deep - level transient spectroscopy (DLTS) measurement, determine that the charge - transition energy level of TS defects is 0.6 eV above the valence band. - Explain the relationship between this charge - transition energy level and the photocurrent changes observed in previous studies. 4. **Detection of Spin Signals**: - Use electron spin resonance (ESR) and optically detected magnetic resonance (ODMR) techniques to attempt to detect the spin signals of TS defects. - The conclusion is that no obvious spin signal was detected, possibly because of low generation efficiency or the fact that TS defects themselves have no spin characteristics. ### Main Conclusions - TS defects exhibit a stable zero - phonon line TS1 in low - temperature photoluminescence experiments, and the basal - plane projection of their emission dipole vectors is aligned along the Si - C bond direction. - TS defects show a strong response to mechanical strain, resulting in spectral splitting and triple - splitting according to three different crystal orientations. - DLTS measurements indicate that the charge - transition energy level of TS defects is 0.6 eV above the valence band. - Despite multiple attempts, the spin signal of TS defects could not be detected. These results provide an important reference for future coupling of optical, mechanical, and electrical degrees of freedom on the SiC platform and lay the foundation for the identification of the atomic structure of TS defects.