Abstract:Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it was shown that straining the crystal can lead to beneficial effects regarding the emission properties. Motivated by this, we theoretically study the main effects of strain on the electronic level structure and optical electric-dipole transitions of the V defect in SiC. In particular we show how strain can be used to engineer the g-tensor, electronic selection rules, and the hyperfine interaction. Based on these insights we discuss optical Lambda systems and a path forward to initializing the quantum state of strained TM defects in SiC.
What problem does this paper attempt to address?
The key problem that this paper attempts to solve is how to regulate the electronic energy level structure and optical electric dipole transition characteristics of transition - metal defects (especially vanadium defects) in silicon carbide (SiC) through strain engineering, so as to optimize its performance in quantum technology applications. Specifically, the author focuses on the following aspects:
1. **Regulation of g - tensor**: Study how strain changes the g - tensor of vanadium defects, which is crucial for achieving precise spin manipulation and read - out.
2. **Regulation of selection rules**: Explore the influence of strain on the selection rules of electron transitions, which is helpful for designing efficient spectral measurement and quantum - state initialization schemes.
3. **Regulation of hyperfine interactions**: Analyze the influence of strain on hyperfine interactions, thereby providing a new approach for nuclear - spin initialization.
4. **Design of Lambda systems**: Based on the above regulations, propose a scheme for constructing Lambda systems for the preparation and read - out of pseudo - spin states.
### Specific problem description
#### 1. Regulation of g - tensor
By introducing strain, the g - tensor of vanadium defects can be changed, making its response to magnetic fields perpendicular and parallel to the crystal axis directions different. The specific formula is as follows:
\[ H_z^{n, \pm} = \mu_B g_z^{n, \pm} \tilde{S}_z B_z + \mu_B g_x^{n, \pm} \begin{pmatrix} \cos(\phi_n) & \pm \sin(\phi_n) \\ \mp \sin(\phi_n) & \cos(\phi_n) \end{pmatrix} \begin{pmatrix} B_x \\ B_y \end{pmatrix}, \]
where \( g_z^{n, \pm} = g_s \pm 2 r_{nn} \cos(\theta_n) \), \( g_x^{n, \pm} = \pm g_s \sin(\theta_n) \), and \(\tilde{S}_k\) is the pseudo - spin (1/2) operator of KD.
#### 2. Regulation of selection rules
Strain can significantly affect the selection rules, making originally forbidden transitions allowed. For example, under strong strain, the |1,−, σ⟩ ↔ |2,+, σ⟩ transition is mainly sensitive to \( E_y \). The specific matrix - element expression is:
\[ \langle 2, +, \sigma | H_{el} | 1, −, \sigma \rangle = iE_z E_z^{12} \sin \left( \frac{\phi_2 - \phi_1}{2} \right) - iE_x E_x^{12} \left[ E_x \sin \left( \frac{\phi_2 + \phi_1}{2} \right) - E_y \cos \left( \frac{\phi_2 + \phi_1}{2} \right) \right]. \]
#### 3. Regulation of hyperfine interactions
Strain can also change the form of hyperfine interactions and affect the initialization of nuclear spins. The specific expression is:
\[ P_n H_{hf} P_m = a_z^{nm} S_z I_z + \frac{a_z^{nm'}}{2} (S^+ I^- + S^- I^+) + \text{other terms}. \]
#### 4. Design of Lambda systems
Combining strain and static magnetic fields, an optical Lambda system can be set up. For example, by introducing x - type strain and a magnetic field in the xz plane, two ground - state KDs and an excited - state KD can form a Lambda system. The specific expression is:
\[ |n, \pm, \tilde{\sigma} \rangle = \cos \left( \frac{\phi_{n, \pm}}{2} \right) |n, \pm, \sigma \rangle + \sigma \sin \left( \frac{\phi_{n, \pm}}{2} \right) |n, \pm, \bar{\sigma} \rangle \]