Abstract:Silicon carbide (SiC), as a wide-band gap semiconductor, plays an important role in high temperature and high-power devices, and the spin defect has great application prospect in quantum technology. Divacancy in SiC (VCVSi, VV) has attracted more and more attention. There are a lot of experimental studies on color center preparation by ion implantation, but the mechanism of atomic scale defects in the experimental preparation process is not fully understood. EPI epitaxial 4H–SiC was implanted with 250 keV proton at room temperature under three fluence of 1E14 cm−2, 1E15 cm−2, 1E16 cm−2. Defects of implanted 4H–SiC samples were characterized by photoluminescence spectrum and electron paramagnetic resonance (EPR). The existence of the optimal implantation fluence for VSi and VCVSi (VV) color centers by hydrogen ion implantation was found. Molecular dynamics (MD) simulation by considering the ionization energy loss for swift ion implantation were used to study the defect distribution and transformation at atomic-scale during hydrogen ion implantation and post-annealing. The optimal implantation fluence was found and confirmed by comparing the atomic-scale implantation simulation with the experimental results. In the annealing simulation, the optimal annealing temperature for the color centers in 4H–SiC was verified, and its formation mechanism was analyzed by accurately calculating the defect transformation during the annealing process. Finally, in order to accurately control the depth of color center in 4H–SiC, dual ions implantation of carbon and proton has been studied to realize the optimal divacancy yield by SRIM and MD simulations. Molecular dynamics simulation results showed that low-fluence C pre-implantation is helpful to improve the color center yield for the dual ions implantation.

IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

Antisite Defect SiC as a Source of the DI Center in 4H‐SiC

Lattice Defects Distribution of H+ Implanted 4H-Sic Investigated by Deep-Ultraviolet Raman Spectroscopy

Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Atomic-scale revealing defects in ion irradiated 4H-SiC

On the experimental properties of the TS defect in 4H-SiC

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Characterizations on the Doping of Single-Crystal Silicon Carbide

Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Experimental Determination of the Dipole Orientation of Single Color Centers in Silicon Carbide

TCAD modeling of radiation-induced defects in 4H-SiC diodes

Optical Characterization of Ion-Implanted 4H-SiC

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Photoluminescence Study of Beryllium Implantation Induced Intrinsic Defects in 6H-Silicon Carbide

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons