Abstract:Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to interesting effects when introducing Si dopants. Here we present a study of cross-sectional scanning tunneling microscopy (X-STM) and density functional theory (DFT) calculations to study Si donors in AlAs at the atomic scale. Based on their crystal symmetry and contrast strengths, we identify Si donors up to four layers below the (110) surface of AlAs. Interestingly, their short-range local density of states (LDOS) is very similar to Si atoms in the (110) surface of GaAs. Additionally we show high-resolution images of Si donors in all these layers. For empty state imaging, the experimental and simulated STM images based on DFT show excellent agreement for Si donor up to two layers below the surface.

What problem does this paper attempt to address?

### The problems that the paper attempts to solve This paper aims to study the properties of silicon (Si) - doped aluminum arsenide (AlAs) at the atomic scale. Specifically, the authors use cross - sectional scanning tunneling microscopy (X - STM) and density - functional theory (DFT) calculations to explore the behavior of Si dopants in AlAs. The following are the main problems of this study: 1. **Understanding the behavior of Si dopants in AlAs**: - Si is the most common n - type dopant in III - V semiconductors. Although the behavior of Si dopants in GaAs (a direct - band - gap material) has been widely studied, the behavior of Si dopants in AlAs (an indirect - band - gap material) has not been fully understood. - Compared with GaAs, AlAs has a different band - gap structure (indirect band - gap), so introducing Si dopants will produce different local density of states (LDOS) and electron wave - function characteristics. 2. **Identifying and characterizing the location and state of Si dopants**: - Researchers use X - STM technology to perform high - resolution imaging of Si dopants to identify their locations within up to four layers below the (110) surface. - Verify the experimental results through DFT calculations and explain the electronic structure and local density of states of Si dopants at different depths. 3. **Comparing the behavior of Si dopants in different materials**: - Compare the behavior of Si dopants in AlAs and GaAs, especially their local density of states and short - range wave - function characteristics. - Explore the unique characteristics of Si dopants in AlAs, such as the imaging characteristics on the (110) surface and the differences from other materials (such as GaAs and Si). 4. **Combining experimental and theoretical methods**: - Use X - STM for experimental measurements and simulate STM images through DFT calculations to ensure the consistency between theory and experimental results. - Through this method, researchers can gain a deeper understanding of the behavior of Si dopants in AlAs and their impact on the electronic properties of the material. ### Formula presentation To better understand the behavior of Si dopants in AlAs, the following are some key formulas: - **Bohr radius**: Used to describe the spread range of the bound electron wave function of the dopant \[ a_B=\frac{\hbar^2}{m_e^*e^2} \] where \(\hbar\) is the reduced Planck constant, \(m_e^*\) is the effective mass, and \(e\) is the electron charge. - **Fermi wavelength**: Affects the wavelength of Friedel oscillations \[ \lambda_F = \frac{2\pi}{k_F}=\frac{2\pi}{\sqrt{2m_e^*E_F}} \] where \(k_F\) is the Fermi wave vector and \(E_F\) is the Fermi level. Through these formulas, researchers can explain the experimentally observed phenomena and further verify these phenomena through theoretical calculations.

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