Abstract:Monolayer \delta-doped structures in silicon have attracted renewed interest with their recent incorporation into atomic-scale device fabrication strategies as source and drain electrodes and in-plane gates. Modeling the physics of \delta-doping at this scale proves challenging, however, due to the large computational overhead associated with ab initio and atomistic methods. Here, we develop an analytical theory based on an effective mass approximation. We specifically consider the Si:P materials system, and the limit of high donor density, which has been the subject of recent experiments. In this case, metallic behavior including screening tends to smooth out the local disorder potential associated with random dopant placement. While smooth potentials may be difficult to incorporate into microscopic, single-electron analyses, the problem is easily treated in the effective mass theory by means of a jellium approximation for the ionic charge. We then go beyond the analytic model, incorporating exchange and correlation effects within a simple numerical model. We argue that such an approach is appropriate for describing realistic, high-density, highly disordered devices, providing results comparable to density functional theory, but with greater intuitive appeal, and lower computational effort. We investigate valley coupling in these structures, finding that valley splitting in the low-lying \Gamma band grows much more quickly than the \Gamma-\Delta band splitting at high densities. We also find that many-body exchange and correlation corrections affect the valley splitting more strongly than they affect the band splitting.

LDA DFT simulations of an isolated silicon donor on the (110) surface of GaAs

An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory

Silicon Donor Array as a Disordered One-Dimensional Electron Gas

Local Density of States of Silicon Impurity in Lightly and Heavily Doped AlAs/GaAs Superlattices

Opening the Band Gap of Graphene Through Silicon Doping for the Improved Performance of Graphene/gaas Heterojunction Solar Cells.

Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues

Shell DFT-1/2 method towards engineering accuracy for semiconductors: GGA versus LDA

Large-scale spin-polarized DFT calculation of electronic properties of GaAs with defects

Mapping the wavefunction of transition metal acceptor states in the GaAs surface

Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 10(19) cm(-3)

Effective mass theory of monolayer δ-doping in the high-density limit

LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Electronic structure and imaginary dielectric function for 2D GaAs doped with Si amphoteric impurities: A DFT study

Antisite Defects in SiAlAs/GaAs Modulation‐Doped Superlattices

Excess electron screening of remote donors and mobility in modern GaAs/AlGaAs herostructures

Electronic structure of boron and aluminum $δ$-doped layers in silicon

Dangling bond defects on Si surfaces and their consequences on energy band diagrams: from a photoelectrochemical perspective

Optoelectronic characterization of Si and Be doped GaAs thin films

Using ground state and excited state density functional theory to decipher 3 d dopant defects in GaN

Band offsets at the crystalline/amorphous silicon interface from first-principles