Abstract:Impurity doping in silicon (Si) ultra-large-scale integration is one of the key challenges which prevent further device miniaturization. Using ultraviolet photoelectron spectroscopy and X-ray absorption spectroscopy in the total fluorescence yield mode, we show that the lowest unoccupied and highest occupied electronic states of ≤3 nm thick SiO2-coated Si nanowells shift by up to 0.2 eV below the conduction band and ca. 0.7 eV below the valence band edge of bulk silicon, respectively. This nanoscale electronic structure shift induced by anions at surfaces (NESSIAS) provides the means for low-nanoscale intrinsic Si (i-Si) to be flooded by electrons from an external (bigger, metallic) reservoir, thereby getting highly electron- (n-) conductive. While our findings deviate from the behavior commonly believed to govern the properties of silicon nanowells, they are further confirmed by the fundamental energy gap as per nanowell thickness when compared against published experimental data. Supporting our findings further with hybrid density functional theory calculations, we show that other group IV semiconductors (diamond, Ge) do respond to the NESSIAS effect in accord with Si. We predict adequate nanowire cross-sections (X-sections) from experimental nanowell data with a recently established crystallographic analysis, paving the way to undoped ultrasmall silicon electronic devices with significantly reduced gate lengths, using complementary metal-oxide-semiconductor-compatible materials.

Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 10(19) cm(-3)

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Metal-insulator transition in films of doped semiconductor nanocrystals

Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Hyperdoped silicon: Processing, properties, and devices

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Doping silicon nanocrystals with boron and phosphorus

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

Donor incomplete ionization and mobility enhancement in ultra-thin silicon-on-insulator films doped by phosphorus end-terminated polymers

Single donor ionization energies in a nanoscale CMOS channel

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Doped and Codoped Silicon Nanocrystals: the Role of Surfaces and Interfaces

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes