Abstract:We report a systematic and quantitative study of near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta doping. For AlGaN/GaN, we obtained good theoretical agreement with experimental measurements of transition energy, integrated absorbance and linewidth by considering many-body effects, interface roughness, and calculations of the transition lifetime that include dephasing. For the AlInN/GaN system, experimental measurements of the integrated absorbance due to the superlattice transitions produced values more than one order of magnitude lower than AlGaN/GaN heterostructures at similar doping levels. Furthermore, observed transition energies were roughly 150 meV higher than expected. The weak absorption and high transition energies measured in these structures is attributed to columnar alloy inhomogeneity in the AlInN barriers observed in high-angle annular dark-field scanning transmission electron microscopy. We simulated the effect of these inhomogeneities using three-dimensional band-structure calculations. The inhomogeneities were modeled as AlInN nanorods with radially varying In composition embedded in the barrier material of the superlattice. We show that inclusion of the nanorods leads to the depletion of the quantum wells (QWs) due to localization of charge carriers in high-In-containing regions. The higher energy of the intersubband transitions was attributed to the relatively uniform regions of the QWs surrounded by high Al (95%) composition barriers. The calculated transition energy assuming Al0.95In0.05N barriers was in good agreement with experimental results.

Local Density of States of Silicon Impurity in Lightly and Heavily Doped AlAs/GaAs Superlattices

The Nature of the Si Impurity in Ultrathin AlAs/GaAs Superlattices

LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices

Antisite Defects in SiAlAs/GaAs Modulation‐Doped Superlattices

An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory

Electronic structure and imaginary dielectric function for 2D GaAs doped with Si amphoteric impurities: A DFT study

Optical Properties of GaAs/AlAs Superlattices with Randomly Distributed Layer Thicknesses.

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Influences of Si sheet doping densities on the morphological, conductive and optical characteristics of InAs/GaAs quantum dots

Defects and Dopants in Zinc-Blende Aluminum Arsenide: a First-Principles Study

Local Structures of Isovalent and Heterovalent Dilute Impurities in Si Crystal Probed by Fluorescence X-Ray Absorption Fine Structure

CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN A-Si:H/a-sin_x:h SUPERLATTICES

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Comparative Study Of Intersubband Absorption In Algan/Gan And Alinn/Gan Superlattices: Impact Of Material Inhomogeneities

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Optical Properties of Δ-Doped GaAs and GaAs/Al 0.1 Ga 0.9 As Superlattices

The Distribution of Density of Gap States for Phosphorus Doped Amorphous Silicon Measured by DLTS

LDA DFT simulations of an isolated silicon donor on the (110) surface of GaAs

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Local Lattice Distortion of Ge Impurity in Si (001): Multiple-Scattering Exafs Study