Abstract:Utilizations of silicon-based luminescent devices are restricted by the indirect-gap nature of diamond silicon. In this study, the high-throughput method is employed to expedite discoveries of direct-gap silicon crystals. The machine learning (ML) potential is utilized to construct a dataset comprising 2637 silicon allotropes, which is subsequently screened using an ML Hamiltonian model and density functional theory calculations, resulting in identification of 47 direct-gap Si structures. We calculate transition dipole moments (TDM), energies, and phonon bandstructures of these structures to validate their performance. Additionally, we recalculate bandgaps of these structures employing the HSE06 functional. 22 silicon allotropes are identified as potential photovoltaic materials. Among them, the energy per atom of Si22-Pm, which has a direct bandgap of 1.27 eV, is 0.026 eV/atom higher than diamond silicon. Si18-C2/m, which has a direct bandgap of 0.796 eV, exhibits the highest TDM among identified structures. Si16-P21/c, which has a direct bandgap of 0.907 eV, has the mass density of 2.316 g/cm3, which is the highest among identified structures and higher than that of diamond silicon. The structure Si12-P1, which possesses a direct bandgap of 1.69 eV, exhibits the highest spectroscopic limited maximum efficiency (SLME) among identified structures at 32.28%, surpassing that of diamond silicon. This study offers insights into properties of silicon crystals while presenting a systematic high-throughput method for material discovery.

The Distribution of Density of Gap States for Phosphorus Doped Amorphous Silicon Measured by DLTS

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

Deep Level Transient Spectroscopic Investigation of Phosphorus-Doped Silicon by Self-Assembled Molecular Monolayers

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Optical Method for Calculating the Dopant Concentration of Doped Amorphous Semiconductors

Ultradense Phosphorous Delta Layers Grown into Silicon from Ph3 Molecular Precursors

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Electronic properties of delta-doped phosphorus layers in silicon and germanium

Local Density of States of Silicon Impurity in Lightly and Heavily Doped AlAs/GaAs Superlattices

Profiling the Deep Levels in Sige/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Identifying Direct Bandgap Silicon Structures with High-throughput Search and Machine Learning Methods

Deep-Level Transient Spectroscopy Study On Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

Subband Light Emission from Phosphorous-Doped Amorphous Si/Sio2 Multilayers at Room Temperature

Space Distribution of Deep Levels in SiGe/Si Heterostructure

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Gap states caused by oxygen precipitation in Czochralski silicon crystals

Observation of Normal Hall Coefficient of Amorphous Si Thin Films Prepared by Low-Pressure Chemical-Vapor Deposition