Observation of Normal Hall Coefficient of Amorphous Si Thin Films Prepared by Low-Pressure Chemical-Vapor Deposition

N DU,YT ZHU,BY TONG,SK WONG
DOI: https://doi.org/10.1103/physrevb.41.1251
1990-01-01
Abstract:Hall coefficients of the normal sign have been observed in doped amorphous silicon thin films fabricated by low-pressure chemical-vapor deposition method. In phosphorus-doped material, the magnitude of the Hall mobility is 0.15 ${\mathrm{cm}}^{2}$ ${\mathrm{V}}^{\mathrm{\ensuremath{-}}1}$ ${\mathrm{s}}^{\mathrm{\ensuremath{-}}1}$, corresponding to a room-temperature conductivity 0.3 (\ensuremath{\Omega} cm${)}^{\mathrm{\ensuremath{-}}1}$. In boron-doped amorphous silicon, the magnitude of the Hall mobility is 0.11 ${\mathrm{cm}}^{2}$ ${\mathrm{V}}^{\mathrm{\ensuremath{-}}1}$ ${\mathrm{s}}^{\mathrm{\ensuremath{-}}1}$. The material is amorphous in structure as identified by various methods.
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