Room-Temperature Anomalous Hall Effect in Amorphous Si-Based Magnetic Semiconductor

Jia-Hsien Yao,Hsiu-Hau Lin,Yun-Liang Soo,Tai-Sing Wu,Jai-Lin Tsai,Ming-Der Lan,Tsung-Shune Chin
DOI: https://doi.org/10.1063/1.3691173
IF: 4
2012-01-01
Applied Physics Letters
Abstract:Here, we show that Mn-doped amorphous hydrogenated Si reveals room-temperature ferromagnetism. Various characterization techniques rule out the formation of magnetic clusters. In particular, anomalous Hall-effect is found even at 300 K in annealed Si89.5Mn10.5 samples. The observed anomalous Hall-effect provides direct evidence that the ferromagnetic order is coupled to the itinerant carriers, making these samples workable magnetic semiconductors. This work demonstrates the great potential for Si-based semiconductor spintronics at room temperature, which is readily integrated with the current information technology.
What problem does this paper attempt to address?