Mn-doped Amorphous Si:H Films with Anomalous Hall Effect Up to 150 K

Jia-Hsien Yao,Shin-Chih Li,Ming-Der Lan,Tsung-Shune Chin
DOI: https://doi.org/10.1063/1.3089247
IF: 4
2009-01-01
Applied Physics Letters
Abstract:Structural, magnetic, and electrical properties were investigated of Mn-doped amorphous silicon films prepared by magnetron sputtering with and without hydrogen. Ferromagnetism at room temperature was observed and no clusters or second phases were detected from x-ray diffraction and high-resolution transmission electron microscopy analyses. Hydrogenation enhances saturation magnetization, carrier concentration, and Curie temperature by about 500%, 300%–500%, and 100 K, respectively. The M-T curve of hydrogenated sample fits very well by combination of Curie–Weiss law and three-dimensional spin-wave. Anomalous Hall effect was reproducibly obtained at 150 K. These suggest that the origin of ferromagnetism may arise from the carrier mediated mechanism.
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