Abstract:Ultrathin films of manganese silicides on silicon are of relevance as a possible material system for building spintronics devices with silicon technology. In order to achieve insight into epitaxial growth of such films on Si(001), total-energy calculations are presented using density-functional theory and the full-potential augmented plane wave plus local orbital method. For adsorption of a single Mn atom on Si(001), we find that binding at the subsurface sites below the Si surface dimers is similar to 0.9 eV stronger than on-surface adsorption. There is an energy barrier of only 0.3 eV for adsorbed Mn to go subsurface, and an energy barrier of 1.2 eV for the reverse process. From the calculated potential-energy surface for the Mn adatom, we conclude that the most stable site on the surface corresponds to the hollow site where Mn is placed between two Si surface dimers. For on-surface diffusion, both along and perpendicular to the Si dimer rows, the Mn atoms have to overcome energy barriers of 0.65 eV. For deposition of 0.5 monolayers (ML) or more, we find that the Si dimers of the Si(001) surface are broken up, and a mixed MnSi layer becomes the energetically most favorable structure. For coverages above 1 ML, the lowest-energy structure changes to a full Mn subsurface layer, capped by a layer of Si adatoms. We identify this transition with the onset of Mn-silicide formation in an epitaxially stabilized CsCl-like crystal structure. Such MnSi films are found to have sizable magnetic moments at the Mn atoms near the surface and interface, and ferromagnetic coupling of the Mn magnetic moments within the layers. Layer-resolved electronic densities of state are presented that show a high degree of spin polarization at the Fermi level, up to 45% and 27% for films with two or three Si-Mn layers, respectively.

STRUCTURE AND MAGNETIC PROPERTIES IN <font>Mn</font>-DOPED <font>Si</font>

Structure And Magnetic Properties In Mn-Doped Si

Magnetic Properties and Magnetocaloric Effect of Nd<sub>0.7</sub>Gd<sub>0.3</sub>Mn<sub>2</sub>Si<sub>2</sub> Alloy

Structural Characterization Of Mn Doped Sic Magnetic Thin Films

Investigation of Mn-doped Si films prepared by magnetron cosputtering

Structural Study of Mnxsi1-X Magnetic Semiconductor Thin Films

Investigation on the Magnetic and Electrical Properties of Crystalline Mn0.05si0.95 Films

Ferromagnetism in Mn-doped Silicon

Ferromagnetism in Polycrystalline Si0.9654mn0.0346:B Thin Films

Cosputtered Mn-doped Si Thin Films Studied by X-Ray Spectroscopy

Magnetic and Electronic Transport Properties of Mn-doped Silicon

Structural transitions, magnetic properties, and electronic structures of Co(Fe)-doped MnNiSi compounds

Energetic Stability, Electronic Structure, And Magnetism In Mn-Doped Silicon Dilute Magnetic Semiconductors

Epitaxy of Mn on Si(001): Adsorption, Surface Diffusion, and Magnetic Properties Studied by Density-Functional Theory

Magnetic Properties of Mn-doped Cubic Silicon Carbide

Structural and magnetic properties of MnCo1-xFexSi alloys

Hole-mediated Ferromagnetism in Polycrystalline Si1−xMnx:B Films

Influence of Si Co-Doping on Magnetic, Electrical and Optical Properties of Ga1–x Mn X N Film Grown by MOCVD

Magnetic properties, chemical and phase composition of thin manganese silicide films fabricated by pulsed laser deposition

Local Structures Around Mn Atoms in Mnxsi1-X Thin Films Probed by Fluorescence Xafs

Local Structures and Concentration Dependence of Magnetic Properties in Cr- and Mn-doped Amorphous Silicon Ferromagnetic Thin Films