Energetic Stability, Electronic Structure, And Magnetism In Mn-Doped Silicon Dilute Magnetic Semiconductors

Qinghua Liu,Wensheng Yan,He Wei,Zhihu Sun,Zhiyun Pan,A. Soldatov,Cong Mai,Congjian Pei,Xinfeng Zhang,Yong Jiang,Shiqiang Wei
DOI: https://doi.org/10.1103/PhysRevB.77.245211
IF: 3.7
2008-01-01
Physical Review B
Abstract:First-principles study on the energetic stability, electronic structure, and magnetic coupling in Mn-doped silicon with various configurations has been performed systematically. The results show that the poly-Mn atoms prefer to aggregate in the Mn-doped silicon dilute magnetic semiconductor. It is found that the tetrahedral interstitial Mn (Mn-T) atoms assemble together via an intervening substitutional Mn (Mn-Si) ion, subsequently forming the generally favored Mn-T-Mn-Si-Mn-T-type complexes. The dominant d-d exchange interactions between the Mn-Si and Mn-T make all Mn ions in the Mn-T-Mn-Si-Mn-T structures interact ferromagnetically with each other.
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