Magnetism of Amorphous Ge1−xMnx Magnetic Semiconductor Films

Jiang-xia Deng,Yu-feng Tian,Shi-shen Yan,Qiang Cao,Guo-lei Liu,Yan-xue Chen,Liang-mo Mei,Gang Ji,Ze Zhang
DOI: https://doi.org/10.1063/1.2951460
IF: 2.877
2008-01-01
Journal of Applied Physics
Abstract:Amorphous Ge1−xMnx magnetic semiconductor films with high Mn concentrations were prepared on liquid-nitrogen (LN2)-cooled glass substrates by ultrahigh vacuum thermal coevaporation. Hysteresis loops measured at 5K show coexistence of ferromagnetism and paramagnetism. The maximum Curie temperature of 220K was found in Ge0.48Mn0.52 film. Moreover, exchange bias occurs in magnetization hysteresis loops for samples with higher Mn concentrations, which can be explained by the antiferromagntic exchange coupling between ferromagnetic phase and antiferromagnetic phase. All the Ge1−xMnx magnetic semiconductor films show semiconducting transport behavior and anomalous Hall effects below the Curie temperature, indicating carrier-mediated ferromagnetism.
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