Manipulation of crystalline structure, magnetic performance, and topological feature in Mn 3 Ge films

Xiaolei Wang,Chen Zhang,Qianqian Yang,Lei Liu,Dong Pan,Xue Chen,Jinxiang Deng,Tianrui Zhai,Hui-Xiong Deng

DOI: https://doi.org/10.1063/5.0071093

IF: 6.6351

2021-11-01

APL Materials

Abstract:The Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in material science. Here, we reported the controlled film growth of Heusler alloy Mn3Ge, which could crystallize in respective tetragonal and hexagonal structures. The tetragonal D022-type Mn3Ge film exhibits strong perpendicular ferromagnetic anisotropy, while the hexagonal D019-type Mn3Ge film indicates non-collinear triangular antiferromagnetic order. From our experimental observations of structure characterizations, magnetic properties, anomalous Hall effect, and magnetoresistance measurements, we realized the manipulation of spin orientations and topological features. Majority/minority spin polarized Fermi surface and density of states of both tetragonal and hexagonal Mn3Ge structures were investigated by density functional theory calculations. Our work not only opens up technology routes toward the development of Mn3X-based devices for applications in topological spintronics and spin-torque memories but also leads to engineer the physical properties for fundamental study.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to realize the regulation of crystal structure, magnetic properties and topological characteristics on the same Mn₃Ge thin film through a simple post - annealing method. Specifically, the paper studied two main structures (tetragonal D0₂₂ - type and hexagonal D0₁₉ - type) of Mn₃Ge thin films under different growth conditions and their corresponding magnetic and topological characteristics.

### Decomposition of the core problems in the paper:
1. **Regulation of crystal structure**
- Mn₃Ge thin films can form two different crystal structures, namely tetragonal D0₂₂ - type and hexagonal D0₁₉ - type, through different growth conditions (such as temperature and annealing treatment).
- The tetragonal D0₂₂ - type structure exhibits strong perpendicular magnetic anisotropy, while the hexagonal D0₁₉ - type structure exhibits non - collinear triangular antiferromagnetic order.

2. **Differences in magnetic properties**
- The tetragonal D0₂₂ - type structure has strong perpendicular ferromagnetism and is suitable for low - power - consumption, high - density magnetic storage devices.
- The hexagonal D0₁₉ - type structure exhibits non - collinear antiferromagnetism, and due to non - zero Berry curvature, it exhibits a significant anomalous Hall effect (AHE), which makes it a candidate material for topological Weyl semimetals.

3. **Research on topological characteristics**
- The non - collinear spin arrangement in the hexagonal D0₁₉ - type structure leads to non - zero Berry curvature, thus triggering a strong anomalous Hall effect.
- Through density functional theory (DFT) calculations, the electronic structures and spin - polarization characteristics of these two structures were verified, and their magnetic and topological properties were explained.

4. **Exploration of practical applications**
- The tetragonal D0₂₂ - type structure is suitable for low - power - consumption, high - density magnetic random - access memory (MRAM).
- The hexagonal D0₁₉ - type structure provides potential application scenarios for topological spintronics.

### Summary:
The main objective of the paper is to reveal the magnetic properties and topological characteristics of Mn₃Ge thin films under different crystal structures through a combination of experimental and theoretical methods, and to explore their potential applications in spintronics and topological materials fields. Through a simple post - annealing process, the phase transition from strong ferromagnetism to non - collinear antiferromagnetism was achieved, demonstrating the effective regulation ability of crystal structure and magnetic properties. This not only provides new ideas for the design of Mn₃X - based devices, but also lays the foundation for further research on thermodynamic mechanisms and other Mn₃X systems.

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