Abstract:Ultrathin films of manganese silicides on silicon are of relevance as a possible material system for building spintronics devices with silicon technology. In order to achieve insight into epitaxial growth of such films on Si(001), total-energy calculations are presented using density-functional theory and the full-potential augmented plane wave plus local orbital method. For adsorption of a single Mn atom on Si(001), we find that binding at the subsurface sites below the Si surface dimers is similar to 0.9 eV stronger than on-surface adsorption. There is an energy barrier of only 0.3 eV for adsorbed Mn to go subsurface, and an energy barrier of 1.2 eV for the reverse process. From the calculated potential-energy surface for the Mn adatom, we conclude that the most stable site on the surface corresponds to the hollow site where Mn is placed between two Si surface dimers. For on-surface diffusion, both along and perpendicular to the Si dimer rows, the Mn atoms have to overcome energy barriers of 0.65 eV. For deposition of 0.5 monolayers (ML) or more, we find that the Si dimers of the Si(001) surface are broken up, and a mixed MnSi layer becomes the energetically most favorable structure. For coverages above 1 ML, the lowest-energy structure changes to a full Mn subsurface layer, capped by a layer of Si adatoms. We identify this transition with the onset of Mn-silicide formation in an epitaxially stabilized CsCl-like crystal structure. Such MnSi films are found to have sizable magnetic moments at the Mn atoms near the surface and interface, and ferromagnetic coupling of the Mn magnetic moments within the layers. Layer-resolved electronic densities of state are presented that show a high degree of spin polarization at the Fermi level, up to 45% and 27% for films with two or three Si-Mn layers, respectively.

Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (0 0 1) substrates

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substrates

Effect of Mn Concentration and Growth Temperature on Nanostructures and Magnetic Properties of Ge1−xMnx Grown on Si

Tadpole Shaped Ge0.96Mn0.04 Magnetic Semiconductors Grown on Si

Thin films MnGe grown on Si(111)

Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films

Growth and Properties of Magnetron Cosputtering Grown MnxGe1−x on Si (001)

Mn-rich clusters in GeMn magnetic semiconductors: Structural evolution and magnetic property

Investigating the strain controlled epitaxial growth of Mn 3 Ge films through thickness modulation

Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

Epitaxy of Mn on Si(001): Adsorption, Surface Diffusion, and Magnetic Properties Studied by Density-Functional Theory

Homoepitaxial Mn3Ge films on ultra-thin Fe seed layer with high perpendicular magnetic anisotropy

Structure, magnetic and magnetocaloric properties of the Mn5Ge3 thin film grown on Si(111)

Manipulation of crystalline structure, magnetic performance, and topological feature in Mn 3 Ge films

Structural and Magnetic Properties of MBE-grown GeMnN_{2} Thin Films

Structure and magnetism of self-organized Ge(1-x)Mn(x) nano-columns

Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

Structural Study of Mnxsi1-X Magnetic Semiconductor Thin Films

Magnetic Properties of Mn-Implanted N-Type Ge

Magnetism of Amorphous Ge1−xMnx Magnetic Semiconductor Films