Structural and Magnetic Properties of MBE-grown GeMnN2 Thin Films

S. H. Cheung
DOI: https://doi.org/10.1103/physrevb.85.144113
IF: 3.7
2012-01-01
Physical Review B
Abstract:Epitaxial GeMnN2 thin films are synthesized by plasma-assisted molecular beam epitaxy. Transmission electron microscopy and x-ray diffraction measurements confirm that it is the orthorhombic variant, consistent with the predictions of first-principles calculations. The magnetic properties of the films are related to defects, with samples grown under Ge-rich conditions exhibiting a net magnetic moment above room temperature. These results are explained by first-principles calculations, indicating that the preferential substitution of one magnetic sublattice of GeMnN2 by impurities and/or intrinsic defects such as Ge antisites produces a net magnetic moment in an antiferromagnetic background, and also introduces spin-polarized carriers near the Fermi level.
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