Abstract:We present high field magnetotransport studies of Ge1-x-y(SnxMny)Te bulk multiferroics with diamagnetic Sn and paramagnetic Mn concentration x = 0.38 to 0.79 and y = 0.02 to 0.086, respectively. The zero field resistivity, {\rho}(T) takes significant contribution from defects below T = 20 K however, a mixed scattering contribution from dynamic disorder and unusual sources is estimated from T = 20 K to 300 K. The carrier mobility shows anomalous temperature dependence from T0.2 to T0.5 which hints towards possible presence of polaronic effects resulting from coupling of holes with phonons. This anomalous behavior cannot be understood in terms of pure phononic scattering mechanism at high temperature. From point of view of high field results, the transverse component of magnetoresistivity manifests anomalous Hall effect originating from extrinsic scattering sources, particularly the side jump mechanism reveals a larger contribution. We also find that the correlation between the transverse and longitudinal conductivities follow the universal scaling law {\sigma}xy ~ {\sigma}xxn where n = 1.6 in the low conductivity limit. The values n = 1.5 to 1.8 obtained for the present GSMT alloys justify the bad metal hopping regime since the results fall in the low conductivity ferromagnetic family with {\sigma}xx ~ 104 ohmcm-1. The interpretation of the n = 1.6 scaling in the low conductivity regime is thus far not fully understood. However, the anomalous Hall resistivity scaling with modified relation by Tian et al is indicative of the dominant side jump scattering along with noticeable role of skew scattering.

Strong Anisotropy of Magnetization and Sign Reversion of Ordinary Hall Coefficient in Single Crystal Ge1-Xmnx Magnetic Semiconductor Films

Magnetism of Amorphous Ge1−xMnx Magnetic Semiconductor Films

Linear Magnetization Dependence Of The Intrinsic Anomalous Hall Effect

Extrinsic Anomalous Hall effect in Mn Doped GeSnTe Semiconductors in the Bad Metal Hopping Regime

Magnetism Inmnxge1−xsemiconductors Mediated by Impurity Band Carriers

Anomalous Hall Effect in perpendicularly magnetized Mn(_{3-x})Ga thin films

Giant anomalous Hall effect in epitaxial Mn$_{3.2}$Ge films with a cubic kagome structure

Manipulation of crystalline structure, magnetic performance, and topological feature in Mn 3 Ge films

Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys

Anomalous Hall Effect–Like Behavior with In‐Plane Magnetic Field in Noncollinear Antiferromagnetic Mn3Sn Films

Epitaxial Structure and Magnetic Anisotropies of Metastable Single Crystal Co0.70Mn0.30 Film

Magnetocrystalline anisotropy and exchange probed by high-field anomalous Hall effect in fully-compensated half-metallic Mn2RuxGa thin films

Study of Magnetic Anisotropy and Magnetization Reversal Using the Quadratic Magnetooptical Effect in Epitaxial Co(x)Mn(y)Ge(z)(111) Films.

Structural, magnetic, and transport properties of polycrystalline Mn3Ga0.8Ge0.2 alloy

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (0 0 1) substrates

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substrates

Effect of Mn Concentration and Growth Temperature on Nanostructures and Magnetic Properties of Ge1−xMnx Grown on Si

Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation

Minority-spin conduction in ferromagnetic Mn 5 Ge 3 C x and Mn 5 Si 3 C x films derived from anisotropic magnetoresistance and density functional theory

Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te