Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

Minority-spin conduction in ferromagnetic Mn 5 Ge 3 C x and Mn 5 Si 3 C x films derived from anisotropic magnetoresistance and density functional theory

Study of half metallicity, structural and mechanical properties in inverse Heusler alloy Mn2ZnSi(1- x)Ge x and a superlattice

Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys

Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films

Magnetic and spin‐gapless related transport properties in sputtered Mn2CoGa thin films

Manipulation of crystalline structure, magnetic performance, and topological feature in Mn 3 Ge films

Structure, Magnetism and Spin Polarization in (ni 1−x Co X ) 2 MnGa Alloys: Unusual Composition Dependences

Direct evidence for minority spin gap in the Co2MnSi Heusler alloy

Strain-induced Switching Between Noncollinear and Collinear Spin Configuration in Magnetic Mn5Ge3 Films

Investigating the strain controlled epitaxial growth of Mn 3 Ge films through thickness modulation

Complex magnetic structure and spin waves of the noncollinear antiferromagnet Mn5Si3

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

Spin transport of half-metal Mn2X3 with high Curie temperature: An ideal giant magnetoresistance device from electrical and thermal drives

Structural, magnetic, and transport properties of polycrystalline Mn3Ga0.8Ge0.2 alloy

Strong Anisotropy of Magnetization and Sign Reversion of Ordinary Hall Coefficient in Single Crystal Ge1-Xmnx Magnetic Semiconductor Films

First-principles calculations of exchange interactions, spin waves, and temperature dependence of magnetization in inverse-Heusler-based spin gapless semiconductors

Structure, magnetic and magnetocaloric properties of the Mn5Ge3 thin film grown on Si(111)

Half-metallic fully compensated ferrimagnetism and multifunctional spin transport properties of Mn3Al

Magnetic, magneto-thermal and magneto-transport properties in SmMn2Si2-xGex compounds

Structural and magnetic properties of MnCo1-xFexSi alloys

{Spin polarization tuning in Mn$_{x}$Fe$_{1-x}$Ge$_{3}$