Abstract:Motivated by recent reports on high Curie temperatures in Cr- and Mn-doped aluminum nitrides and the fabrication of heavily transition-metal-doped ones with room-temperature ferromagnetism, we study systematically 12.5% transition-metal substituted aluminium nitrides, hexagonal ${\mathrm{CrAl}}_{7}{\mathrm{N}}_{8}$ and ${\mathrm{MnAl}}_{7}{\mathrm{N}}_{8}$, using a full-potential density-functional method. We optimize fully the crystal structures and prove the stability of their ferromagnetism against possible antiferromagnetic orders. Their volumes are expanded only by about 1% compared with that of $\mathrm{AlN}$. Every $d$ electron of $+3$ cations of Cr and Mn contributes one Bohr magneton to the moment. Our calculations show that both of them are half-metallic ferromagnets with half-metallic gaps larger than $1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$. The transition-metal substitution creates 10 transition-metal $d$-dominated impurity bands in the semiconductor gap of $\mathrm{AlN}$. The hybridization of the $d$ states with the N $p$ ones yields a large spin exchange splitting of the $d$ states which drives the ferromagnetism. The half-metallicity is attributed to the wide minority-spin gap across the Fermi level and the favorable majority-spin density of states of the $d$-dominated bands in addition to the above factors. 25% Cr and Mn substituted cubic aluminum nitrides, cubic ${\mathrm{CrAl}}_{3}{\mathrm{N}}_{4}$ and ${\mathrm{MnAl}}_{3}{\mathrm{N}}_{4}$, are studied in the same way and proved to share almost all the properties of the two hexagonal ones. The mechanism for the ferromagnetism should be useful for understanding nitride-based diluted magnetic semiconductors. These half-metallic transition-metal aluminum nitrides, at least some of them, could be useful in spintronics.

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