Abstract:The amorphous iron-germanium system ($a\ensuremath{-}{\mathrm{Fe}}_{x}{\mathrm{Ge}}_{1\ensuremath{-}x}$) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of $a\ensuremath{-}{\mathrm{Fe}}_{x}{\mathrm{Ge}}_{1\ensuremath{-}x}$ is well explained by the Stoner model for Fe concentrations $x$ above the onset of magnetic order around $x=0.4$, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-$3d$ states sufficiently to polarize the electronic structure despite $\mathbf{k}$ being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity ${\ensuremath{\rho}}_{xy}^{\mathrm{AH}}$ relative to crystalline FeGe; this ${\ensuremath{\rho}}_{xy}^{\mathrm{AH}}$ is compared to density-functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied $\mathbf{k}$ states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of $a\ensuremath{-}{\mathrm{Fe}}_{x}{\mathrm{Ge}}_{1\ensuremath{-}x}$ ($0.38\ensuremath{\le}x\ensuremath{\le}0.61$). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to $\mathbf{k}$ space. This result and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.

Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

Anomalous Hall effect and magnetic structure of the topological semimetal (Mn$_{0.78}$Fe$_{0.22}$)$_{3}$Ge

Uniaxial Magnetic Anisotropy and Anomalous Hall Effect in the Ferromagnetic Compound PrMn2Ge2

Unusual Multiple Magnetic Transitions and Anomalous Hall Effect Observed in Antiferromagnetic Weyl Semimetal, Mn$_{2.94}$Ge (Ge-rich)

Unusual multiple magnetic transitions and anomalous Hall effect observed in antiferromagnetic Weyl semimetal, Mn Ge (Ge-rich)

Extrinsic Anomalous Hall effect in Mn Doped GeSnTe Semiconductors in the Bad Metal Hopping Regime

Large anomalous Hall effect driven by non-vanishing Berry curvature in non-collinear antiferromagnetic Mn3Ge

Weyl points and anomalous transport effects tuned by the Fe doping in Mn$_3$Ge Weyl semimetal

Weyl points and anomalous transport effects tuned by the Fe doping in Mn3Ge Weyl semimetal

Linear Magnetization Dependence Of The Intrinsic Anomalous Hall Effect

Anomalous Hall effect in field-effect structures of (Ga,Mn)As

Anomalous Hall Conductivity of a Non-Collinear Magnetic Antiperovskite

Anomalous Hall Effect in perpendicularly magnetized Mn(_{3-x})Ga thin films

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals

Robust Anomalous Hall Effect and Temperature-Driven Lifshitz Transition in Weyl Semimetal Mn3Ge

Anomalous Hall Effect In Epitaxial L1(0)-Mn1.5ga Films With Variable Chemical Ordering

Itinerant Ferromagnetism and Intrinsic Anomalous Hall Effect in Amorphous Iron-Germanium

Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal

Anomalous Hall Effect in Ferromagnetic Semiconductors

Large Anomalous Hall Effect at Room Temperature in a Fermi-Level-Tuned Kagome Antiferromagnet