Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals

K. Racka,I. Kuryliszyn,M. Arciszewska,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet,V. Dugaev,E. I. Slynko,V. E. Slynko,J.-M. Broto
DOI: https://doi.org/10.48550/arXiv.cond-mat/0207355
2002-07-15
Materials Science
Abstract:The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of RS, particularly change of the sign.
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