Anomalous Hall Effect–Like Behavior with In‐Plane Magnetic Field in Noncollinear Antiferromagnetic Mn3Sn Films

Yunfeng You,Xianzhe Chen,Xiaofeng Zhou,Youdi Gu,Ruiqi Zhang,Feng Pan,Cheng Song
DOI: https://doi.org/10.1002/aelm.201800818
IF: 6.2
2019-01-01
Advanced Electronic Materials
Abstract:Magnetotransport is at the center of spintronics. Mn3Sn single crystals, an antiferromagnet that has a noncollinear 120° spin order, exhibit large anomalous Hall effect (AHE) at room temperature. But such a behavior has remained elusive in epitaxial Mn3Sn films. Here the observation of AHE‐like behavior with in‐plane magnetic field up to room temperature in quasi‐epitaxial Mn3Sn thin films, prepared by magnetron sputtering, is reported. The growth of both (1120)‐ and (0001)‐oriented Mn3Sn films provides a unique opportunity for comparing AHE‐like behavior in three different measurement configurations. When the magnetic field is swept along (0001) plane, such as the direction of [0110] and [2110], the films show comparatively higher Hall conductivity than its perpendicular counterpart [0001], irrespective of their respectively orthogonal current along [0001] or [0110]. A quite weak ferromagnetic moment of ≈3 emu cm−3 is obtained in (1120)‐oriented Mn3Sn films, guaranteeing the switching of the Hall signals with magnetization reversal. This finding would advance the integration of Mn3Sn in antiferromagnetic spintronics.
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