Planar Hall effect and Anisotropic Magnetoresistance in Thin Films of Chiral Antiferromagnet Mn3Sn

Vinay Sharma,Rajeev Nepal,Ramesh C. Budhani

2023-07-15

Abstract:Antiferromagnetic Weyl semimetals with spin chirality offer excellent platforms to address the Berry phase physics, which manifests prominently in several of their electro-optical and electro-magnetic responses including as a large anomalous Hall effect (AHE) and spin Hall conductivity. Here, we report measurements of magneto-transport in c-axis textured Mn3Sn thin films grown on the [111] plane of single crystal MgO. At room temperature, these films display a weak uncompensated magnetic moment of \approx 0.12 \micro_{B}/f.u. in the basal plane and a longitudinal resistivity (\rho_{xx}) close to \approx 3.8 \micro\Omega.m. A residual resistivity ration (\rho_{xx} (300 K)/\rho_{xx} (2 K)) of \approx 3.92 further indicates the high quality of the films. While at 300 K a weak AHE together with field-linear Hall resistivity (\rho_{xy}) is observed in magnetic fields (H) applied perpendicular to the Kagome planes, the temperature (T) dependence of \rho_{xy} shows prominent signatures of three magnetic phases in the temperature regime of 2 to 300 K. The \rho_{xy} also derives a non-trivial topological contribution (\r{ho}THE \approx 1n\Omega.m) in the spin glass phase which appears at T \geq 100 K. Our measurements of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) over a wide H-T phase space reveal the hitherto unseen effects in the three magnetic phases of Mn3Sn. While the AMR and PHE are negative in the inverse triangular spin phase (250 K \geq T \geq TN), the helical phase (100 \geq T \geq 250 K) is devoid of anisotropic in-plane resistivity, and the spin glass phase shows a sign reversal of AMR with the increasing magnetic field. The origin of this sign change in AMR/PHE is attributed to the emergence of topologically protected spin textures like skyrmions where the fictitious effective magnetic field is estimated to be \approx 4.4 tesla.

Materials Science,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the behaviors of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in different magnetic phases in Mn₃Sn thin films and their relationships with topological spin textures. Specifically, by studying the electrical transport properties of c - axis - oriented Mn₃Sn thin films under different temperature and magnetic field conditions, the authors aim to reveal:

1. **Characteristics of different magnetic phases**: By measuring AMR and PHE at different temperatures (from 2 K to 300 K), three main magnetic phases in Mn₃Sn are identified: antitriangular antiferromagnetic phase (T > 250 K), helical phase (100 K ≤ T ≤ 250 K) and spin - glass phase (T < 100 K).

2. **Influence of topological spin textures**: Explore the influence of topological spin textures (such as skyrmions) in these magnetic phases on AMR and PHE, especially the sign - reversal phenomenon of AMR and PHE observed in the spin - glass phase.

3. **Mechanisms of magnetoresistance and Hall effect**: Analyze the magnetic - field - dependence of AMR and PHE to understand the physical mechanisms behind these effects, especially the chiral anomaly related to the Weyl semimetal state.

4. **Evaluation of material quality**: By measuring the longitudinal resistivity (ρxx) and the residual resistance ratio (RRR) of the thin films, evaluate the quality of the thin films and verify whether they are suitable for further spintronics applications.

Through these studies, the authors hope to provide a more in - depth understanding of Mn₃Sn, a material with potential application value, especially in the research of its topological properties and spintronics performance.