Abstract:In recent years, topological antiferromagnetic materials with hexagonal Kagome structure have attracted great research interest due to their unique properties. Despite having a net magnetic moment close to zero, these topological antiferromagnets exhibit strong magnetoelectric, magneto-optical, and magnetothermal effects, with strength comparable to that of ferromagnetic materials, which makes them highly valuable for various applications. After extensive studies of several years, people have realized that most of the unique properties of topological antiferromagnets are actually closely related to their magnetic structures. However, it has been found that the magnetic structure of these materials is highly sensitive to their chemical composition and growth conditions. Therefore, it is crucial to develop a universal and simple method for measuring the magnetic structure and determining the magnetic phase transitions of hexagonal Kagome topological antiferromagnetic materials, which can severe as a good supplement for the current high-energy neutron diffraction approach, that is not accessible for ordinary laboratories. In this study, we successfully prepared high-quality (11 0)-oriented hexagonal Kagome antiferromagnetic Mn 3 Sn thin films on (1 02)-oriented Al 2 O 3 single crystal substrates using the pulsed laser deposition (PLD) method. After systematically measuring how the magnetic and transport properties of a Mn 3 Sn thin film change with temperature, we found that its magnetization curve, Hall resistivity curve, and magnetoresistance curve exhibit certain anomalous features at some or all of its three magnetic phase transition temperatures. These features can serve as good evidences of magnetic phase transitions in this hexagonal Kagome antiferromagnetic Mn3Sn thin film, or even could be used to measure the temperature of these magnetic phase transitions. Our work contributes to the further advancement of the application of hexagonal Kagome topological antiferromagnetic materials in spin electronic devices.

Thickness dependent anomalous Hall effect in noncollinear antiferromagnetic Mn3Sn polycrystalline thin films

The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy

Observation of Anomalous Hall Effect in Noncollinear Antiferromagnetic Mn3Sn Films

Room Temperature Anomalous Hall Effect in Antiferromagnetic Mn3SnN Films

Anomalous Hall Effect–Like Behavior with In‐Plane Magnetic Field in Noncollinear Antiferromagnetic Mn3Sn Films

Room-Temperature Terahertz Anomalous Hall Effect in Weyl Antiferromagnet Mn$_3$Sn Thin Films

Size-dependent Anomalous Hall Effect in Noncollinear Antiferromagnetic Mn3Sn Films

Room-temperature Angular-Dependent Topological Hall Effect in Chiral Antiferromagnetic Weyl Semimetal Mn3Sn

Magnetic properties and anomalous Hall effect of Mn3Sn thin films controlled by defects and ferroelectric 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 substrate

Planar Hall effect and Anisotropic Magnetoresistance in Thin Films of Chiral Antiferromagnet Mn3Sn

Observation of large intrinsic anomalous Hall conductivity in polycrystalline Mn$_3$Sn films

Evaluation of spin diffusion length and spin Hall angle of antiferromagnetic Weyl semimetal Mn$_3$Sn

Anomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn$_{3}$Ni$_{1-x}$Cu$_{x}$N

Anisotropic intrinsic anomalous Hall effect in ordered 3dPt alloys

Intrinsic and extrinsic anomalous transport properties in noncollinear antiferromagnetic Mn$_3$Sn from first-principle calculations

Anomalous thermal Hall effect in the topological antiferromagnetic state

Observation of an Anomalous Hall Effect in Single-crystal Mn3Pt

Pressure-tunable large anomalous Hall effect in ferromagnetic metal LiMn 6 Sn 6

Terahertz conductivity of the magnetic Weyl semimetal Mn$_{3}$Sn films

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Determination of the magnetic phase transition in Mn 3 Sn thin films via transport measurements