Investigating the strain controlled epitaxial growth of Mn 3 Ge films through thickness modulation
Xiaolei Wang,Shuainan Cui,Qianqian Yang,Lin Ma,Jiao Xu,Guoliang Xu,Zixuan Shang,Danmin Liu,Jinliang Zhao,Jinxiang Deng,Tianrui Zhai,Zhipeng Hou
DOI: https://doi.org/10.1016/j.apsusc.2022.154247
IF: 6.7
2022-07-23
Applied Surface Science
Abstract:Mn 3 Ge, a typical member of the Heusler family, has a high spin polarization and large spin Hall angle, making it a potential material for spintronic devices. Regarded as a topological Weyl semi-metal, Mn 3 Ge could be applied in topological spintronics owing to its special Fermi-arc-type surface states and various spin transport properties. In this study, we grew high-quality perpendicularly magnetized Mn 3 Gefilms through magnetron sputtering. X-ray diffraction (XRD) showed that hexagonal antiferromagnetic Mn 3 Ge was mixed with tetragonal ferromagnetic Mn 3 Ge. Thickness-dependent double-phase Mn 3 Ge films with large magnetic anisotropy and robust anomalous Hall effect (AHE) were obtained. The triangular spin structure of hexagonal Mn 3 Ge enhances the AHE; however, it shrinks the coercivity of the tetragonal ferromagnetic property. This manipulation of coexisting multi-phases comes from the strain of the substrate during growth, achieved by controlling the film thickness. Structural, magnetic, and transport measurements demonstrated stress modulation of the defect pinning, magnetic anisotropy, and spin transport properties. The coexistence of antiferromagnetic and ferromagnetic Mn 3 Ge provides the possibility of a new generation of Mn 3 X-based devices for applications in spin-torque memories.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films