Abstract:Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of their exchange and anisotropy energies. However, experimental and theoretical techniques to detect and manipulate the antiferromagnetic order in a fully electrical manner must be developed to enable advanced spintronic devices with antiferromagnets (AFMs) as their active spin-dependent elements. Among the various AFMs, conducting AFMs offer high electrical and thermal conductivities and strong electron-spin-phonon interactions. Noncollinear metallic AFMs with negative chirality, including Mn3Sn, Mn3Ge, and Mn3GaN, offer rich physics that arises from their topology. In this review article, we introduce the crystal structure and the physical phenomena observed in negative chirality AFMs. Experimental and theoretical advances related to current-induced dynamics on the spin structure of Mn3Sn are discussed. We then present a potential AFM spintronic device that can serve as a non-volatile memory, high-frequency signal generator, neuron emulator, and even a probabilistic bit, depending on the design parameters and the input stimuli, i.e., amplitude and pulse width of the injected spin current and the external magnetic field. In this device, spin-orbit torques can be used to manipulate the order parameter, while the device state can be read via tunneling magnetoresistance. We also present analytic models that relate the performance characteristics of the device with its design parameters, thus enabling a rapid technology-device assessment. Effects of Joule heating and thermal noise on the device characteristics are briefly discussed. We close the paper by summarizing the status of research and present our outlook in this rapidly evolving research field.

Chiral-spin rotation of non-collinear antiferromagnet by spin–orbit torque

Handedness anomaly in a non-collinear antiferromagnet under spin–orbit torque

Spin-Orbit Torque Driven Chiral Domain Wall Motion in Mn3Sn

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

Anomalous Hall Effect–Like Behavior with In‐Plane Magnetic Field in Noncollinear Antiferromagnetic Mn3Sn Films

Fluctuation-mediated spin-orbit torque enhancement in the noncollinear antiferromagnet Mn3Ni0.35Cu0.65N

Switching of magnetic domains in a noncollinear antiferromagnet at the nanoscale

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

Atomic Displacements Enabling the Observation of the Anomalous Hall Effect in a Non‐Collinear Antiferromagnet

Facet-dependent Giant Spin Orbit Torque in Single Crystalline Antiferromagnetic Ir-Mn / Ferromagnetic Permalloy Bilayers

Magnetic and magnetic inverse spin Hall effects in a non-collinear antiferromagnet

Spontaneous topological Hall effect induced by non-coplanar antiferromagnetic order in intercalated van der Waals materials

Robust spin torque switching of noncollinear antiferromagnet Mn3Sn

Higher order exchange driven noncoplanar magnetic state and large anomalous Hall effects in electron doped kagome magnet Mn 3 Sn

Giant facet-dependent spin-orbit torque and spin Hall conductivity in the triangular antiferromagnet IrMn3

Observation of Anomalous Hall Effect in Noncollinear Antiferromagnetic Mn3Sn Films

Setting of the magnetic structure of chiral kagome antiferromagnets by a seeded spin-orbit torque

Spintronic devices and applications using noncollinear chiral antiferromagnets

Planar Hall effect and Anisotropic Magnetoresistance in Thin Films of Chiral Antiferromagnet Mn3Sn

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source

All-electrical Manipulation of Magnetization Dynamics in a Ferromagnet by Antiferromagnets with Anisotropic Spin Hall Effects