Anisotropic Inverse Spin Hall Effect Observed in Sputtering Grown Topological Antiferromagnet Mn3Sn Films

Dengfu Deng,Dong Gao,Shuyao Chen,Yunfei Xie,Jiayi zheng,Lintong Huang,Chenjie Zhang,Donghua Liu,Lei Bi,Tao Liu
DOI: https://doi.org/10.1007/s10948-024-06800-y
2024-07-14
Journal of Superconductivity and Novel Magnetism
Abstract:Recent theoretically predicted strong anisotropic spin Hall effect (SHE) or inverse SHE (ISHE) in chiral antiferromagnetic compounds Mn 3 X ( X = Ge, Sn, Ga, Ir, Rh, and Pt) could potentially expand the horizons of the antiferromagnet spintronics; however, it has not been experimentally observed yet. For achieving this goal, we have first successfully fabricated high-quality Kagome phase Mn 3 Sn films with smooth surface by a combination of room-temperature magnetron sputtering and high-temperate annealing. These Mn 3 Sn films were proved to be epitaxially grown on MgO (110) single crystal substrate with a seldom reported ( ) orientation that could serve as a good platform for the studies of the crystalline orientation-related anisotropic phenomenon. Then, by employing spin pumping-induced inverse spin Hall effect (SP-ISHE) voltage measurements, we have experimentally proved the existence of crystalline orientation-related anisotropic ISHE with an amplitude of more than 35% in our Mn 3 Sn films.
physics, condensed matter, applied
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