Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4

Gang Shi,Mingjie Zhang,Dayu Yan,Honglei Feng,Meng Yang,Youguo Shi,Yongqing Li
DOI: https://doi.org/10.1088/0256-307X/37/4/047301
2020-04-11
Abstract:We report on low-temperature electron transport properties of MnSb2Te4, a candidate of ferrimagnetic Weyl semimetal. Long -range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as well as sharp jumps in the magnetoresistance. At temperatures below 4 K, a lnT-type upturn appears in the temperature dependence of longitudinal resistance, which can be attributed to the electron-electron interaction (EEI), since the weak localization can be excluded by the temperature dependence of magnetoresistance. Although the anomalous Hall resistance exhibits a similar lnT-type upturn in the same temperature range, such correction is absent in the anomalous Hall conductivity. Our work demonstrates that MnSb2Te4 microflakes provide an ideal system to test the theory of EEI correction to the anomalous Hall effect.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the anomalous Hall effect (AHE) in the layered ferrimagnetic material MnSb₂Te₄, especially the quantum correction phenomenon that occurs in the electron transport properties at low temperatures. Specifically, the authors focus on the following issues: 1. **Electron transport properties at low temperatures**: Study the behavior of the longitudinal resistance and the anomalous Hall resistance of MnSb₂Te₄ at low temperatures, and explore whether these behaviors are affected by electron - electron interactions (EEI). 2. **Correction of the anomalous Hall conductivity**: Verify whether EEI corrects the anomalous Hall conductivity and whether this correction has a temperature dependence. 3. **Comparison between theory and experiment**: Test the existing theoretical predictions regarding the influence of EEI on AHE through experimental data, especially the theory of Wölfle et al., and explain why significant low - temperature corrections are observed in some materials while not in others. ### Main findings - **Resistance behavior at low temperatures**: Below 4 K, both the longitudinal resistance and the anomalous Hall resistance show a logarithmic temperature dependence (ln T - type upward curvature), which can be attributed to the EEI effect. - **Anomalous Hall conductivity**: Although the longitudinal resistance and the anomalous Hall resistance have obvious corrections at low temperatures, the anomalous Hall conductivity still follows a behavior similar to Bloch's law in the same temperature range, without significant quantum corrections. - **Exclusion of the weak localization effect**: The influence of the weak localization effect on the low - temperature corrections is excluded through magnetoresistance measurements, further confirming that EEI is the main cause of these corrections. ### Significance This study provides important experimental evidence for understanding the role of electron - electron interactions in the anomalous Hall effect and lays the foundation for further research on AHE in more materials with broken time - reversal symmetry. In particular, MnSb₂Te₄ micro - flakes provide an ideal platform to test the theoretical predictions of EEI on AHE, which is helpful for in - depth understanding of AHE in the framework of many - body physics. ### Formula summary - Temperature dependence of the longitudinal resistance: \[ R_{xx} \propto T^{5/2} \] - Temperature dependence of the anomalous Hall conductivity: \[ \sigma_{AH} \propto 1-\left(\frac{T}{T_C}\right)^\alpha \] where \(\alpha = 2.02 \pm 0.02\). - Relative change relationship caused by EEI: \[ \delta R_{AH}=\frac{\Delta R_{AH}(T)}{R_{AH,0}}\approx 2\delta R_{xx}=2\frac{\Delta R_{xx}(T)}{R_{xx,0}} \] These results indicate that in MnSb₂Te₄, EEI has a significant low - temperature correction on the longitudinal resistance and the anomalous Hall resistance, while having a relatively small influence on the anomalous Hall conductivity.