Abstract:Constructing heterostructures of a topological insulator (TI) with an undoped magnetic insulator (MI) is a clean and versatile approach to break the time-reversible symmetry in the TI surface states. Despite a lot of efforts, the strength of interfacial magnetic proximity effect (MPE) is still too weak to achieve the quantum anomalous Hall effect and many other topological quantum phenomena. Recently, a new approach based on intercalation of atomic layers of MI, referred to as magnetic extension, was proposed to realize strong MPE [2D Mater. 4, 025082(2017)]. Motivated by this proposal, here, we study a magnetic extension system prepared by molecular beam epitaxy growth of MnSe thin films on topological insulator (Bi,Sb)2Te3. Direct evidence is obtained for intercalation of MnSe atomic layer into a few quintuple layers of (Bi,Sb)2Te3, forming either a double magnetic septuple layer (SL) or an isolated single SL at the interface, where one SL denotes a van der Waals building block consisting of B-A-B-Mn-B-A-B (A=Bi1-xSbx, B= Te1-ySey). The two types of interfaces (namely TI/mono-SL and TI/bi-SL) have different MPE, which is manifested as distinctively different transport behaviors. Specifically, the mono-SL induces a spinflip transition with a sharp change at small magnetic field in the anomalous Hall effect of TI layers, while the bi-SL induces a spin-flop transition with a slow change at large field. Our work demonstrates a useful platform to realize the full potential of the magnetic extension approach for pursuing novel topological physics and related device applications.

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi2Te4

Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi 2 Te 4 Thin Films

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4

Unveiling the Anomalous Hall Response of the Magnetic Structure Changes in the Epitaxial MnBi2Te4 Films.

Unconventional Anomalous Hall Effect in Magnetic Topological Insulator MnBi4Te7 Device

Unconventional anomalous Hall effect in magnetic topological insulator MnBi 4 Te 7 device

Intermediate anomalous Hall states induced by noncollinear spin structure in the magnetic topological insulator Mn Bi 2 Te 4

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Quantum Anomalous Layer Hall Effect in the Topological Magnet MnBi2Te4

Intermediate Anomalous Hall States Induced By Noncollinear Spin Structure In The Magnetic Topological Insulator Mnbi2te4

Polarity-tunable anomalous Hall effect in magnetic topological insulator MnBi2Te4

Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device

The anomalous Hall Effect in a Magnetically Extended Topological Insulator Heterostructure

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films

Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi4Te7.

Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi$_2$Te$_4$

Fabrication-induced Even-Odd Discrepancy of Magnetotransport in Few-Layer MnBi_2Te_4