Abstract:MnBi_{2}Te_{4}, an intrinsic magnetic topological insulator, has shown layer-number-correlated magnetic and topological phases. More interestingly, in the isostructural material MnSb_{2}Te_{4}, the antiferromagnetic (AFM) and ferromagnetic (FM) states have been both observed in the bulk counterparts, which are also predicted to be topologically nontrivial. Revealing the layer-number-dependent magnetic properties of MnSb_{2}Te_{4} down to a single septuple layer (SL) is of great significance for exploring the topological phenomena. However, this is still elusive. Here, using the polar reflective magnetic circular dichroism spectroscopy, both the A-type AFM and FM behaviors are observed and comprehensively studied in MnSb_{2}Te_{4} down to a single SL limit. In A-type AFM MnSb_{2}Te_{4} flakes, an obvious odd-even layer-number effect is observed. An additional surface spin-flop (SSF) transition occurs in even-SL flakes with the number of layers larger than 2. With the AFM linear-chain model, we identify that the even-SL flakes stabilize in a collinear state between the SSF transition and the spin-flop transition due to their appropriate energy ratio between the magnetic-field-scale anisotropy and interlayer interaction. In FM MnSb_{2}Te_{4} flakes, we observe very different magnetic behaviors with an abrupt spin-flipping transition and very small saturation fields, indicating a weakened interlayer interaction. By revealing the rich magnetic states of few-SL MnSb_{2}Te_{4} on the parameter space of the number of layers, external magnetic field, and temperature, our findings pave the way for further quantum transport studies of few-SL MnSb_{2}Te_{4}.

Fabrication-induced Even-Odd Discrepancy of Magnetotransport in Few-Layer MnBi_2Te_4

Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4

Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi$_2$Te$_4$

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi 2 Te 4 Thin Films

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi2Te4

Ferromagnetic-antiferromagnetic coexisting ground state and exchange bias effects in MnBi4Te7 and MnBi6Te10

Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi 2 Te 4

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

Direct visualization of edge state in even-layer MnBi2Te4 at zero magnetic field

Unconventional Anomalous Hall Effect in Magnetic Topological Insulator MnBi4Te7 Device

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb 2 Te 4

Fermi level dependence of magnetism and magnetotransport in the magnetic topological insulators Bi$_{2}$Te$_{3}$ and BiSbTe$_{3}$ containing self-organized MnBi$_{2}$Te$_{4}$ septuple layers

Unconventional anomalous Hall effect in magnetic topological insulator MnBi 4 Te 7 device

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet

Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi4Te7.

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films

Magnetic and Transport Properties in the Magnetic Topological Insulators MnBi2Te4(Bi…

Exchange bias in heterostructures combining magnetic topological insulator MnBi2Te4 and metallic ferromagnet Fe3GeTe2

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb_{2}Te_{4}.