Abstract:The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. The rich and complex spin dynamics associated with the van der Waals antiferromagnetic order is expected to generate novel topological phases and phase transitions that are unique to MnBi2Te4. Here we fabricate a device of 7-septuple-layer MnBi2Te4 covered with AlOx capping layer, which enables the investigation of antiferromagnetic quantum anomalous Hall effect over wide parameter spaces. By tuning the gate voltage and perpendicular magnetic field, we uncover a cascade of quantum phase transitions that can be attributed to the influence of spin configurations on charge transport. Furthermore, we find that an in-plane magnetic field enhances both the coercive field and exchange gap of the surface state, in sharp contrast to that in ferromagnetic quantum anomalous Hall state. We propose that these peculiar features arise from the spin flip and flop transitions inherent to van der Waals antiferromagnet. The versatile tunability of the quantum anomalous Hall effect in MnBi2Te4 paves the way for potential applications in topological antiferromagnetic spintronics.

Direct visualization of edge state in even-layer MnBi2Te4 at zero magnetic field

Giant nonlocal edge conduction in the axion insulator state of MnBi2Te4

Observation of Magnetism Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi4Te7.

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

Direct observation of chiral edge current at zero magnetic field in odd-layer MnBi$_2$Te$_4$

Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi 2 Te 4 Thin Films

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi 4 Te 7

Quantum Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi 2 Te 4

Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$

Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator

Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi_2Te_4

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4

Mapping Dirac fermions in the intrinsic antiferromagnetic topological insulators ( Mn Bi 2 Te 4 ) ( Bi 2 Te 3 ) n ( n = 0 , 1 )

Direct Observation of Chiral Edge Current at Zero Magnetic Field in a Magnetic Topological Insulator

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator