Anomalous Hall effect in field-effect structures of (Ga,Mn)As

D. Chiba,A. Werpachowska,M. Endo,Y. Nishitani,F. Matsukura,T. Dietl,H. Ohno
DOI: https://doi.org/10.1103/PhysRevLett.104.106601
2011-01-09
Abstract:The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance $\sigma_{xy}$ has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between $\sigma_{xy}$ and $\sigma_{xx}$, similar to the one observed previously for thicker samples, is recovered.
Materials Science
What problem does this paper attempt to address?