Abstract:Electrical manipulation of phenomena generated by nontrivial band topology is essential for the development of next-generation technology using topological protection. A Weyl semimetal is a three-dimensional gapless system that hosts Weyl fermions as low-energy quasiparticles<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="/articles/s41586-020-2211-2#ref-CR4">4</a>. It has various exotic properties, such as a large anomalous Hall effect (AHE) and chiral anomaly, which are robust owing to the topologically protected Weyl nodes<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="#ref-CR14">14</a>,<a href="#ref-CR15">15</a>,<a href="/articles/s41586-020-2211-2#ref-CR16">16</a>. To manipulate such phenomena, a magnetic version of Weyl semimetals would be useful for controlling the locations of Weyl nodes in the Brillouin zone. Moreover, electrical manipulation of antiferromagnetic Weyl metals would facilitate the use of antiferromagnetic spintronics to realize high-density devices with ultrafast operation<a href="/articles/s41586-020-2211-2#ref-CR17">17</a>,<a href="/articles/s41586-020-2211-2#ref-CR18">18</a>. However, electrical control of a Weyl metal has not yet been reported. Here we demonstrate the electrical switching of a topological antiferromagnetic state and its detection by the AHE at room temperature in a polycrystalline thin film<a href="/articles/s41586-020-2211-2#ref-CR19">19</a> of the antiferromagnetic Weyl metal Mn3Sn<a href="/articles/s41586-020-2211-2#ref-CR9">9</a>,<a href="/articles/s41586-020-2211-2#ref-CR10">10</a>,<a href="/articles/s41586-020-2211-2#ref-CR12">12</a>,<a href="/articles/s41586-020-2211-2#ref-CR20">20</a>, which exhibits zero-field AHE. Using bilayer devices composed of Mn3Sn and nonmagnetic metals, we find that an electrical current density of about 1010 to 1011 amperes per square metre induces magnetic switching in the nonmagnetic metals, with a large change in Hall voltage. In addition, the current polarity along the bias field and the sign of the spin Hall angle of the nonmagnetic metals—positive for Pt (ref. <a href="/articles/s41586-020-2211-2#ref-CR21">21</a>), close to 0 for Cu and negative for W (ref. <a href="/articles/s41586-020-2211-2#ref-CR22">22</a>)—determines the sign of the Hall voltage. Notably, the electrical switching in the antiferromagnet is achieved with the same protocol as that used for ferromagnetic metals<a href="/articles/s41586-020-2211-2#ref-CR23">23</a>,<a href="/articles/s41586-020-2211-2#ref-CR24">24</a>. Our results may lead to further scientific and technological advances in topological magnetism and antiferromagnetic spintronics.

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Electrical manipulation of a topological antiferromagnetic state

Effective electrical manipulation of topological antiferromagnet by orbital Hall effect

Effective Electrical Manipulation of a Topological Antiferromagnet by Orbital Torques

Electrical Switching of the Topological Anomalous Hall Effect in a Non-Collinear Antiferromagnet above Room Temperature

Robust spin torque switching of noncollinear antiferromagnet Mn3Sn

Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control

Switching of magnetic domains in a noncollinear antiferromagnet at the nanoscale

Room-temperature Angular-Dependent Topological Hall Effect in Chiral Antiferromagnetic Weyl Semimetal Mn3Sn

Electrical 180o switching of Néel vector in spin-splitting antiferromagnet

Electrical 180° switching of Néel vector in spin-splitting antiferromagnet

Topological Hall Effect in Thin Films of an Antiferromagnetic Weyl Semimetal Integrated on Si.

Electric-Field Control of Spin Polarization above Room Temperature in Single-Layer A-Type Antiferromagnetic Semiconductor

Giant room temperature anomalous Hall effect and tunable topology in a ferromagnetic topological semimetal Co2MnAl

Noncollinear Mn3Sn for Antiferromagnetic Spintronics

Robust Anomalous Hall Effect and Temperature-Driven Lifshitz Transition in Weyl Semimetal Mn3Ge

Electrical Spin State Manipulation in All‐Magnet Heterojunctions Using a Ferromagnetic Spin Source

Piezomagnetic switching of the anomalous Hall effect in an antiferromagnet at room temperature

Switching of a Magnet by Spin‐Orbit Torque from a Topological Dirac Semimetal

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source

Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal