Abstract:Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect, the axion insulator state, and high-Chern-number and high-temperature Chern insulator (CI) states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by similar to 40-60 degrees, the Hall resistance deviates from the quantization value, and a colossal, anisotropic magnetoresistance is detected. Theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from the ferromagnetic state to the canted antiferromagnetic state induces a topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. These findings reveal a kind of topological phase transition associated with magnetism and spin-orbit coupling. In this letter, we suggest that MnBi2Te4 is an ideal platform for exploring topological quantum phase transitions, and it provides an efficient means for modulating topological quantum states and topological quantum phase transitions.

Topological Magnetoelectric Switching on the Atomic Scale

Tunable dynamical magnetoelectric effect in antiferromagnetic topological insulator MnBi2Te4 films

Topological Axion States in the Magnetic Insulator MnBi_{2}Te_{4} with the Quantized Magnetoelectric Effect.

Half-Magnetic Topological Insulator

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Dynamical Magnetoelectric Effect in Antiferromagnetic Insulator Mn$_2$Bi$_2$Te$_5$

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Observation of Magnetism Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7

Large Dynamical Axion Field in Topological Antiferromagnetic Insulator Mn 2 Bi 2 Te 5

Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi_2Te_4

Intrinsic Topological Phases in Mn2Bi2Te5 Tuned by the Layer Magnetization

Magnetically Controllable Topological Quantum Phase Transitions in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$

Intrinsic Magnetic Topological Insulators in Van Der Waals Layered MnBi2Te4-family Materials

Magnetically Controllable Topological Quantum Phase Transitions in the Antiferromagnetic Topological Insulator MnBi2Te4

Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi 4 Te 7

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

Axion Insulator State with ferromagnetic ordering in CrI3/Bi2Se3/MnBi2Se4 Heterostructure

Axion Insulator State in Hundred-Nanometer-Thick Magnetic Topological Insulator Sandwich Heterostructures

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator