Abstract:Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect, the axion insulator state, and high-Chern-number and high-temperature Chern insulator (CI) states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by similar to 40-60 degrees, the Hall resistance deviates from the quantization value, and a colossal, anisotropic magnetoresistance is detected. Theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from the ferromagnetic state to the canted antiferromagnetic state induces a topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. These findings reveal a kind of topological phase transition associated with magnetism and spin-orbit coupling. In this letter, we suggest that MnBi2Te4 is an ideal platform for exploring topological quantum phase transitions, and it provides an efficient means for modulating topological quantum states and topological quantum phase transitions.

Half-Magnetic Topological Insulator

Magnetic Topological Insulator MnBi6Te10 with a Zero-Field Ferromagnetic State and Gapped Dirac Surface States

Magnetic topological insulator MnBi 6 Te 10 with a zero-field ferromagnetic state and gapped Dirac surface states

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Half-quantized Anomalous Hall Effect in Magnetic Axion Insulator MnBi$_2$Te$_4$/(Bi$_2$Te$_3$)$_n$

Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi_2Te_4

Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$

Gapless Surface Dirac Cone in Antiferromagnetic Topological Insulator MnBi_2Te_4

Hybridization-induced gapped and gapless states on the surface of magnetic topological insulators

Topological Axion States in the Magnetic Insulator MnBi_{2}Te_{4} with the Quantized Magnetoelectric Effect.

Quantum Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi 2 Te 4

Strongly Gapped Topological Surface States on Protected Surfaces of Antiferromagnetic MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$

Intrinsic Magnetic Topological Insulators in Van Der Waals Layered MnBi2Te4-family Materials

Observation of Magnetism Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7

Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Experimental Realization of an Intrinsic Magnetic Topological Insulator

Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Large bandgap quantum anomalous hall insulator in a designer ferromagnet-topological insulator-ferromagnet heterostructure

Hybridization-Induced Gapped and Gapless States on the Surfaces of Magnetic Topological Insulators

Magnetized topological insulator multilayers