Axion Insulator State with ferromagnetic ordering in CrI3/Bi2Se3/MnBi2Se4 Heterostructure

Y. S. Hou,R. Q. Wu

DOI: https://doi.org/10.1103/PhysRevB.101.121401

2020-03-03

Abstract:Realizing axion insulator state with a uniform magnetization considerably facilitates experimental explorations of the intriguing topological magnetoelectric effect, a hallmark of three-dimensional (3D) topological insulators (TIs). Through density functional theory calculations and four-band model studies, we find that magnetic ions Cr3+ in monolayer CrI3 and Mn2+ in septuple-layer MnBi2Se4 have opposite exchange couplings to the topological surface states of 3D TI Bi2Se3. As an exciting result of such opposite exchange couplings, axion insulator state is realized by a uniform magnetization in CrI3/Bi2Se3/MnBi2Se4 heterostructure. Our work opens up opportunities for exploring topological magnetoelectric effect realized by the uniform magnetization induced axion insulator state in heterostructures of 3D TIs and two-dimensional van der Waals ferromagnetic insulators.

Materials Science

What problem does this paper attempt to address?

This paper aims to solve the problem of how to simplify the exploration of the Topological Magnetoelectric Effect (TME) in experiments. Specifically, through Density Functional Theory (DFT) calculations and four - band model studies, the paper found that when the two - dimensional van der Waals ferromagnetic materials CrI₃ and MnBi₂Se₄ form heterostructures with the topological insulator Bi₂Se₃ thin films, they can induce exchange fields with opposite signs, thus forming a stable Ferromagnetic Axion Insulator (FMAI) state. This state remains stable in a wide range of external magnetic fields, providing a new material design idea for realizing the TME effect.

The key points of the paper are as follows:
1. **Problem background**: The traditional Antiferromagnetic Axion Insulator (AFMAI) state usually needs to be achieved within a narrow range of external magnetic fields, which limits its experimental observation and practical application.
2. **Solution**: By using two different two - dimensional van der Waals ferromagnetic materials (CrI₃ and MnBi₂Se₄) to form heterostructures on the topological insulator Bi₂Se₃, the Ferromagnetic Axion Insulator state can be achieved in a wide range of external magnetic fields.
3. **Theoretical support**: DFT calculations and four - band model analysis show that CrI₃ and MnBi₂Se₄ respectively induce exchange fields with opposite signs on the top and bottom surfaces of Bi₂Se₃, thus forming the FMAI state.
4. **Experimental feasibility**: The paper also discusses the preparation methods of this heterostructure and points out its experimental feasibility.

In conclusion, through theoretical calculations and model analysis, this paper proposes a new material combination (CrI₃/Bi₂Se₃/MnBi₂Se₄) to achieve a stable Ferromagnetic Axion Insulator state, providing a new approach for the research of the Topological Magnetoelectric Effect.