Electrical 180o switching of Néel vector in spin-splitting antiferromagnet

Lei Han,Xizhi Fu,Rui Peng,Xingkai Cheng,Jiankun Dai,Liangyang Liu,Yidian Li,Yichi Zhang,Wenxuan Zhu,Hua Bai,Yongjian Zhou,Shixuan Liang,Chong Chen,Qian Wang,Xianzhe Chen,Luyi Yang,Yang Zhang,Cheng Song,Junwei Liu,Feng Pan

2024-01-31

Abstract:Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve an electrically - controlled 180° flip of the Néel vector in antiferromagnets, which is a long - term goal for developing electrically - controlled antiferromagnetic memories with opposite Néel vectors as binary "0" and "1". Currently, the most advanced antiferromagnetic switching mechanisms are mainly limited to 90° or 120° flips of the Néel vector, which require multiple writing channels and are contradictory to ultra - dense integration. Therefore, the paper proposes a deterministic switching mechanism based on spin - orbit torque and experimentally achieves an electrically - controlled 180° flip, solving this problem.

Specifically, the paper focuses on the following aspects:

1. **Achieving 180° electrically - controlled flip**: The paper proposes a method to achieve an electrically - controlled 180° flip of the Néel vector in the antiferromagnetic material Mn5Si3 using spin - orbit torque. This method achieves a deterministic 180° flip by introducing an asymmetric energy barrier, avoiding the multi - channel writing problems caused by the traditional 90° or 120° flips.

2. **Read - out method**: The paper reads the 180° flip of the Néel vector through the anomalous Hall effect (AHE). Experimental results show that by reversing the Néel vector, the spin - split bands and Berry curvature can be controlled, thereby changing the anomalous Hall conductivity (AHC), which provides a reliable read - out method for the 180° flip.

3. **Device application**: Based on the above writing and read - out methods, the paper successfully fabricated an antiferromagnetic device with a high - resistance state and a low - resistance state, achieving stable writing and read - out cycles, laying the foundation for developing high - performance electrically - controlled antiferromagnetic memories.

Overall, the paper aims to promote the practical application of antiferromagnetic memories in next - generation information technology by solving the technical problem of electrically - controlled 180° flip of the Néel vector in antiferromagnetic materials.