Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO

Yixiao Qiao,Zhengde Xu,Zhuo Xu,Yumeng Yang,Zhifeng Zhu

DOI: https://doi.org/10.1063/5.0179040

2024-11-10

Abstract:The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show that by utilizing two spin-orbit torques (SOT) from orthogonal currents, one can deterministically switch the magnetic moments of NiO in two electrical distinguishable states that can be read out using the spin Hall magnetoresistance. This deterministic switching relies on the symmetry of SOT on different sublattices, where the sign reversal of magnetic moments leads to constructive torques in the beginning and balanced torques in the end. In addition, we show that the easy-plane anisotropy plays a key role in the switching, which has been ignored in some previous works. The uniform magnetic dynamics in this work provides a clear physical picture in understanding the SOT switching of NiO. Furthermore, the electrical writing and reading function in our device advances the development of AFM-MRAM.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to achieve deterministic electrical switching operations in the antiferromagnetic oxide NiO with complex anisotropy. Specifically, the authors studied the deterministic switching of the magnetic moment of NiO by using two spin - orbit torques (SOTs) from orthogonal currents, enabling it to switch between two distinguishable electrical states, and these states can be read out through the spin Hall magnetoresistance effect (SMR).

### Main problems and challenges
1. **Writing and reading challenges of antiferromagnetic materials**
- Antiferromagnetic materials (AFM), such as NiO, face great challenges in achieving fast magnetic random - access memory (MRAM) due to their complex anisotropy.
- In particular, it is more difficult to achieve reliable electrical switching operations in materials like NiO with complex anisotropy.

2. **Limitations of existing methods**
- Previous studies have shown that using a single spin - orbit torque (SOT) alone cannot unambiguously switch the magnetic moment of NiO between different stable states.
- This is because a single SOT is not sufficient to overcome the energy barriers generated by anisotropy and exchange interactions.

3. **Impact of multi - axis anisotropy**
- The NiO(111) plane has three easy axes, resulting in more complex spin dynamics.
- The easy - plane anisotropy plays a crucial role in the switching process, which has been overlooked in many previous studies.

### Solutions
The authors proposed a new method, that is, by applying two orthogonal spin - orbit torques (SOTs), the deterministic switching of the NiO magnetic moment can be achieved. The main advantages of this method include:

- **Deterministic switching**: The cooperation of two orthogonal SOTs enables the magnetic moment to switch reliably between the initial and final states.
- **Importance of easy - plane anisotropy**: Studies have shown that the easy - plane anisotropy plays a role in restricting the in - plane rotation of the magnetic moment during the switching process, thus ensuring that they can rotate to another stable state.
- **Readable states**: Through the spin Hall magnetoresistance effect (SMR), two different magnetic states can be easily detected.

### Mathematical models and formulas
To describe the energy and spin dynamics of the NiO system, the authors used the following Hamiltonian and Landau - Lifshitz - Gilbert - Slonczewski (LLGS) equations:

- **Hamiltonian**
\[
E_{\text{NiO}}=-J_{\text{ex}}\mathbf{m}_1\cdot\mathbf{m}_2 + K_1\sum_i\sin^2\theta_i+K_2\sum_i\sin^6\theta_i\cos^6\phi_i-\mu_0m_s\sum_i\sin^6\theta_i(\mathbf{m}_i\cdot\mathbf{H}_{\text{ext}})
\]
where:
- \(J_{\text{ex}}=- 1.8548\times10^{-20}\text{J}\)
- \(K_1=-6.08760\times10^{-24}\text{J}\)
- \(K_2 = 1.2816\times10^{-26}\text{J}\)
- \(m_s = 1.88\mu_B\)

- **LLGS equation**
\[
\frac{d\mathbf{m}_i}{dt}=-\gamma_i\mathbf{m}_i\times\mathbf{H}_{\text{eff},i}+\alpha_i\mathbf{m}_i\times\frac{d\mathbf{m}_i}{dt}-\gamma_i\tau_{\text{DLT},i}\mathbf{m}_i\times(\mathbf{m}_i\times\sigma_i)
\]