Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Dongxing Zheng,Yue-Wen Fang,Yan Wen,Kepeng Song,Yan Li,Bin Fang,Chenhui Zhang,Aitian Chen,Chen Liu,Hanin Algaidi,Meng Tang,Yinchang Ma,Peng Li,Xixiang Zhang

DOI: https://doi.org/10.1002/adfm.202312746

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:Spin-orbit torque resulting from non-magnetic materials with strong spin-orbit coupling enables electrically controlled magnetization switching, offering potential applications in ultralow-power memory and logic devices. However, such switching of perpendicular magnetization usually requires an in-plane magnetic field along the applied current direction, which limits its use. To address this challenge, an all-oxide superlattice is designed and fabricated that show both the perpendicular magneto-crystalline anisotropy and in-plane magnetic anisotropies induced by interfacial engineering. The results demonstrate that the coexistence of perpendicular and in plane magnetic anisotropy breaks the symmetry and thus enables the pure electrical switching of perpendicular magnetization. A field-free switching of magnetization is demonstrated in the specially designed all-oxide SrRuO3/SrIrO3/SrTiO3 superlattices. The findings indicate that the coexistence of perpendicular and in-plane magnetic anisotropy breaks the inversion symmetry, thereby facilitating the pure electrical switching of perpendicular magnetization. This study presents potential applications in ultralow-power memory and logic devices. image