Anisotropic magnetoresistance and nonvolatile memory in superlattices of La2/3Sr1/3MnO3 and antiferromagnet Sr2IrO4

Hui Xu,Haoliang Huang,Qingmei Wu,Zhicheng Wang,Zhangzhang Cui,Xiaofang Zhai,Jianlin Wang,Zhengping Fu,Yalin Lu
DOI: https://doi.org/10.1007/s10853-020-04585-8
IF: 4.5
2020-03-28
Journal of Materials Science
Abstract:Antiferromagnets have attracted considerable interest in the field of spintronics due to their attractive characteristics such as ultrafast spin dynamics and robustness against external magnetic field perturbations. Sr<sub>2</sub>IrO<sub>4</sub> is a rare example of antiferromagnetic semiconductor oxide and has been extensively studied in anisotropic magnetoresistance-based spintronics. However, the anisotropic magnetoresistance of Sr<sub>2</sub>IrO<sub>4</sub> films is usually very small. Herein, we have prepared a (Sr<sub>2</sub>IrO<sub>4</sub>)<sub>4</sub>/(La<sub>2/3</sub>Sr<sub>1/3</sub>MnO<sub>3</sub>)<sub>5</sub> superlattice which shows an enhanced anisotropic magnetoresistance compared to Sr<sub>2</sub>IrO<sub>4</sub> film or La<sub>2/3</sub>Sr<sub>1/3</sub>MnO<sub>3</sub>/Sr<sub>2</sub>IrO<sub>4</sub> heterostructure and an obvious nonvolatile memory effect that is comparable to Sr<sub>2</sub>IrO<sub>4</sub> single crystals. Through magnetic measurements, the increased coercivity and the exchange bias at low temperatures reveal the interfacial magnetic coupling between Sr<sub>2</sub>IrO<sub>4</sub> and La<sub>2/3</sub>Sr<sub>1/3</sub>MnO<sub>3</sub>. Additionally, the remarkable anisotropic magnetoresistance and clear hysteresis of anisotropic magnetoresistance with distinct fourfold symmetry can be controlled by temperature and magnetic field. These findings demonstrate that the superlattices of heavy transition metal oxide Sr<sub>2</sub>IrO<sub>4</sub> are excellent platforms for antiferromagnetic spintronics.
materials science, multidisciplinary
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