Abstract:Spin–orbit torque (SOT) magnetic random access memory is envisioned as an emerging nonvolatile memory due to its ultrahigh speed and low power consumption. The field-free switching scheme in SOT devices is of great interest to both academia and industry. Here, we propose a novel field-free deterministic magnetization switching scheme in a regular magnetic tunnel junction by using two currents sequentially passing interlaced paths, with less requirements of the manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed scheme are validated through both macrospin and micromagnetic simulation. The influences of field-like torque and the Dzyaloshinskii–Moriya interaction effect are further researched. Our proposed scheme shows good scalability and is expected to realize novel digital logic and even computing-in-memory platforms.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c23127?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c23127</a>.Numerical calculation and verification on <a class="ref internalNav" href="#eq6">eqs 6</a> and <a class="ref internalNav" href="#eq8">8</a>; statement of the fluctuating thermal field; phase diagram of the first current and switching probability; results of timing analysis; micromagnetic simulation method; and snapshots of magnetization (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c23127/suppl_file/am0c23127_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Deterministic Spin–Orbit Torque Switching by a Light-Metal Insertion

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Spin–orbit torques in structures with asymmetric dusting layers

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Strain-mediated spin-orbit torque switching for magnetic memory

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Field-free Spin–orbit-Torque Switching of Perpendicular Magnetization Aided by Uniaxial Shape Anisotropy

Field-Free Magnetization Switching in a Ferromagnetic Single Layer Through Multiple Inversion Asymmetry Engineering.

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Comprehensive Study of the Current-Induced Spin–Orbit Torque Perpendicular Effective Field in Asymmetric Multilayers

Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

Spin-orbit Torque from a Ferromagnetic Metal

Field-free Spin-Orbit Torque-Induced Switching of Perpendicular Magnetization in a Ferrimagnetic Layer with a Vertical Composition Gradient.

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Field-Free Switching of Perpendicular Magnetization Induced by Longitudinal Spin-Orbit-Torque Gradient

Current-induced magnetization switching using electrically-insulating spin-torque generator

Field-free spin-orbit torque switching with enhanced switching ratio in Co/Ni multilayers by laterally broken symmetry induced by He ion bombardment

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Enhanced Spin-Orbit Torque and Field-Free Switching in Au/TMDs/Ni Hybrid Structures.

Engineering Symmetry Breaking Enables Efficient Bulk Spin‐Orbit Torque‐Driven Perpendicular Magnetization Switching