Electrical switching of the perpendicular Neel order in a collinear antiferromagnet

Wenqing He,Tianyi Zhang,Yongjian Zhou,Caihua Wan,Hao Wu,Baoshan Cui,Jihao Xia,Ran Zhang,Tengyu Guo,Peng Chen,Mingkun Zhao,Leina Jiang,Alexander Grutter,Purnima P. Balakrishnan,Andrew J. Caruana,Christy J. Kinane,Sean Langridge,Guoqiang Yu,Cheng Song,Xiufeng Han

2024-01-25

Abstract:Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the Néel vector of antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with the perpendicular magnetic anisotropy (PMA), as the negligible stray fields and terahertz spin dynamics can enable memory devices with higher integration density and ultrafast speed. Here we demonstrate that the Néel order information in a prototypical collinear AFM insulator with PMA, Cr2O3, can be reliably readout via the anomalous Hall effect and efficiently switched by the spin-orbit torque (SOT) effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as a mediator, we electrically switch the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer, unambiguously confirming the Néel order switching of the Cr2O3 layer. This work provides a significant basis for developing AFM memory devices based on collinear AFM materials with PMA.

Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve efficient electrical - control switching of vertically - aligned Néel vectors in collinear antiferromagnets (AFM). Specifically, the main research objectives include:

1. **Achieving full - angle (180°) switching of vertical Néel vectors**: Different from the traditional 90° or 120° switching, 180° full - angle switching can encode binary information (0 and 1) more directly, thereby increasing storage density and reading speed.

2. **Using spin - orbit torque (SOT) for low - current - density switching**: By introducing a heavy - metal layer (such as Pt), using the spin - orbit torque generated by spin - orbit coupling, effective control of the Néel vector of antiferromagnetic materials is achieved, and the required current density is only \(5.8\times 10^6 \, \text{A/cm}^2\).

3. **Verifying the reliability and repeatability of Néel - vector switching**: Through experimental verification, ensure that the Néel vector can be stably switched under different temperatures and applied magnetic - field conditions, and has high durability and high - speed performance.

4. **Exploring the application potential of new storage devices based on collinear antiferromagnetic materials**: The research aims to provide theoretical and technical support for the development of next - generation high - density, ultra - fast antiferromagnetic memories, especially storage devices based on materials such as Cr₂O₃.

### Key problem summary:
- **How to achieve 180° full - angle switching of vertical Néel vectors?**
- **How to achieve efficient switching at low current density through spin - orbit torque?**
- **How to verify the reliability and repeatability of this switching?**
- **How to apply these research results to actual storage devices?**

Through the solution of these problems, the research lays the foundation for the development of high - performance antiferromagnetic memories, especially having broad application prospects in collinear antiferromagnetic materials.