Abstract:Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials. Half metallicity, an intriguing physical property arising from the metallic nature of electrons with singular spin polarization and insulating for oppositely polarized electrons, holds a great potential for a 100% spin-polarized current for high-efficiency spintronics. Conventionally synthesized thin films hardly sustain half metallicity inherited from their 3D counterparts. A fundamental challenge, in systems of reduced dimensions, is the almost inevitable spin-mixed edge or surface states in proximity to the Fermi level. Here, we predict electric field-induced half metallicity in bilayer A-type antiferromagnetic van der Waals crystals (i.e., intralayer ferromagnetism and interlayer antiferromagnetism), by employing density functional theory calculations on vanadium diselenide. Electric fields lift energy levels of the constituent layers in opposite directions, leading to the gradual closure of the gap of singular spin-polarized states and the opening of the gap of the others. We show that a vertical electrical field is a generic and effective way to achieve half metallicity in A-type antiferromagnetic bilayers and realize the spin field effect transistor. The electric field-induced half metallicity represents an appealing route to realize 2D half metals and opens opportunities for nanoscale highly efficient antiferromagnetic spintronics for information processing and storage.

Electric-Field Control of Spin Polarization above Room Temperature in Single-Layer A-Type Antiferromagnetic Semiconductor

Electric-Field-Controlled Antiferromagnetic Spintronic Devices

Cr2TiC2-based Double MXenes: Novel 2D Bipolar Antiferromagnetic Semiconductor with Gate-Controllable Spin Orientation Toward Antiferromagnetic Spintronics.

All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Proposal Of A General Scheme To Obtain Room-Temperature Spin Polarization In Asymmetric Antiferromagnetic Semiconductors

Electric-Field Tunable Magnetism in Van Der Waals Bilayers with A-Type Antiferromagnetic Order: Unipolar Versus Bipolar Magnetic Semiconductor

Electrical Control of Antiferromagnetic Metal Up to 15 Nm

Electric-field-driven ferromagnetic response in Janus MnReX3 (X=Se, S) monolayer via asymmetric interface orbital hybridization

Spin-Driven Ferroelectricity in Two-Dimensional Magnetic Heterostructures

Electric-field switching of two-dimensional van der Waals magnets

Electric-Field Control of Magnetic Order: From FeRh to Topological Antiferromagnetic Spintronics

Electric-field Control of Topological Spin Textures in BiFeO3/La0.67Sr0.33MnO3 Heterostructure at Room Temperature

Electric field control of Néel spin–orbit torque in an antiferromagnet

Two-Dimensional Room-Temperature Magnetism in Janus Mn2I3S3 and Cr2I3Se3 Monolayers with Tunable Magnetic Properties by Strain Engineering.

Electrically Induced 2D Half-Metallic Antiferromagnets and Spin Field Effect Transistors.

Electric Field Switching of the Uniaxial Magnetic Anisotropy of an Antiferromagnet

Zeeman Effect in Centrosymmetric Antiferromagnetic Semiconductors Controlled by an Electric Field

Realizing altermagnetism in two-dimensional metal-organic framework semiconductors with electric-field-controlled anisotropic spin current

Electrical control of exchange spring in antiferromagnetic metals

Zeeman effect in centrosymmetric antiferromagnets controlled by electric field

Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control