Proposal Of A General Scheme To Obtain Room-Temperature Spin Polarization In Asymmetric Antiferromagnetic Semiconductors

Xingxing Li,Xiaojun Wu,Zhenyu Li,Jinlong Yang
DOI: https://doi.org/10.1103/PhysRevB.92.125202
IF: 3.7
2015-01-01
Physical Review B
Abstract:Exploring magnetic semiconductors is one of the most important questions for spintronic applications. Although various solutions, such as dilute magnetic semiconductors, have been proposed, a practical spintronic device working at room temperature has not been realized. The key to address this issue is to find magnetic materials with both room-temperature magnetic ordering and large spin polarization around the Fermi energy level. Here, we predict a new concept of asymmetric antiferromagnetic (AFM) semiconductors (AAFMSs) with both features. The high temperature magnetic ordering originates from the AFM coupling between different transition metal ions with strong super-exchange interaction, whereas the large spin polarization around the Fermi energy level owes to d orbital mismatch among these ions. Through first-principles calculations, a family of double perovskites A(2)CrMO(6) (A = Ca, Sr, Ba, and M = Ru, Os) are predicted to be AAFMSs. This paper provides a way for developing spintronic devices working at room temperature.
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