Abstract:Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop new magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into a ferromagnetic Co-Fe-B metallic glass. The atomic structure and electronic structure of the Co-Fe-B-O sample are explored by using first-principles calculations. The total pair correlation functions of both the Co-Fe-B and Co-Fe-B-O samples evidence their glass structures. The bond pair and coordination number analysis together demonstrate that the oxygen addition enables the bond types to change from the dominant metallic bonding in the Co-Fe-B metallic glass to the mixture of metallic, ionic and covalent bonding in the Co-Fe-B-O oxide glass. This results in the localization of electron charge density and the opening of the band gap in the Co-Fe-B-O oxide glass. The density of states suggests the Co-Fe-B-O oxide glass is semiconducting with a band gap of about 1.7 eV, but there are intermediate energy levels in the band gap. Meanwhile, the Co-Fe-B-O oxide glass remains to be ferromagnetic. These results indicate that the Co-Fe-B-O oxide glass is a magnetic semiconductor transferred from a ferromagnetic Co-Fe-B metallic glass, which is further verified by the experimental realization of a Co-Fe-B-O magnetic semiconductor. Furthermore, our calculation results reveal that a hybridization of the 4 s /4 p , 3 d electrons of ferromagnetic Co and Fe atoms and O 2 p electrons exists. Such s , p - d exchange interaction is essential to bridge the mutual interaction between the electrical conduction arising from s -like electrons and ferromagnetism supported by 3 d electrons in magnetic semiconductors, thereby enabling the control of ferromagnetism by electrical means. Our calculation results represent an important step to gain a deeper understanding of the oxygen addition induced metal-semiconductor transition in an amorphous alloy Co-Fe-B system. We anticipate that our calculation results provide theoretical fundamentals for experimentally transferring many other ferromagnetic amorphous alloys into ferromagnetic semiconductors with attractive magnetoelectric coupling properties.

Transparent Magnetic Semiconductors from Ferromagnetic Amorphous Alloys

Designing Magnetic Semiconductors From a Ferromagnetic Metallic Glass

Transparent Magnetic Semiconductor with Embedded Metallic Glass Nano-Granules

Ultrathin Ferrite Nanosheets for Room-Temperature Two-Dimensional Magnetic Semiconductors.

Amorphous magnetic semiconductors with Curie temperatures above room temperature

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Ultra-High-Temperature Ferromagnetism in Intrinsic Tetrahedral Semiconductors.

Ferromagnetism In Semiconductors Doped With Non-Magnetic Elements

Tunability of Room Temperature Ferromagnetism in Spintronic Semiconductors through Non-magnetic Atoms

Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

Amorphous Nonstoichiometric Oxides with Tunable Room-Temperature Ferromagnetism and Electrical Transport.

A story of high-temperature ferromagnetism in semiconductors

Proposal Of A General Scheme To Obtain Room-Temperature Spin Polarization In Asymmetric Antiferromagnetic Semiconductors

Realizing altermagnetism in two-dimensional metal-organic framework semiconductors with electric-field-controlled anisotropic spin current

Two-dimensional chalcogenide-based ferromagnetic semiconductors

A room-temperature magnetic semiconductor from a Co-Fe-Nb-B metallic glass

Diluted Magnetic Semiconductors--bridging Spin and Charge

Electric-field Control of Ferromagnetism in a Co-Fe-Ta-B Amorphous Alloy

Molecular Thin Films: a New Type of Magnetic Switch

Antiferroelectric Altermagnets: Antiferroelectricity Alters Magnets

Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices