Abstract:Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop new magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into a ferromagnetic Co-Fe-B metallic glass. The atomic structure and electronic structure of the Co-Fe-B-O sample are explored by using first-principles calculations. The total pair correlation functions of both the Co-Fe-B and Co-Fe-B-O samples evidence their glass structures. The bond pair and coordination number analysis together demonstrate that the oxygen addition enables the bond types to change from the dominant metallic bonding in the Co-Fe-B metallic glass to the mixture of metallic, ionic and covalent bonding in the Co-Fe-B-O oxide glass. This results in the localization of electron charge density and the opening of the band gap in the Co-Fe-B-O oxide glass. The density of states suggests the Co-Fe-B-O oxide glass is semiconducting with a band gap of about 1.7 eV, but there are intermediate energy levels in the band gap. Meanwhile, the Co-Fe-B-O oxide glass remains to be ferromagnetic. These results indicate that the Co-Fe-B-O oxide glass is a magnetic semiconductor transferred from a ferromagnetic Co-Fe-B metallic glass, which is further verified by the experimental realization of a Co-Fe-B-O magnetic semiconductor. Furthermore, our calculation results reveal that a hybridization of the 4 s /4 p , 3 d electrons of ferromagnetic Co and Fe atoms and O 2 p electrons exists. Such s , p - d exchange interaction is essential to bridge the mutual interaction between the electrical conduction arising from s -like electrons and ferromagnetism supported by 3 d electrons in magnetic semiconductors, thereby enabling the control of ferromagnetism by electrical means. Our calculation results represent an important step to gain a deeper understanding of the oxygen addition induced metal-semiconductor transition in an amorphous alloy Co-Fe-B system. We anticipate that our calculation results provide theoretical fundamentals for experimentally transferring many other ferromagnetic amorphous alloys into ferromagnetic semiconductors with attractive magnetoelectric coupling properties.

A room-temperature magnetic semiconductor from a Co-Fe-Nb-B metallic glass

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Amorphous magnetic semiconductors with Curie temperatures above room temperature

Ultrathin Ferrite Nanosheets for Room-Temperature Two-Dimensional Magnetic Semiconductors.

Ultra-High-Temperature Ferromagnetism in Intrinsic Tetrahedral Semiconductors.

High-throughput Screening of Ferrimagnetic Semiconductors With Ultrahigh N$\acute{e}$el Temperature

Transparent Magnetic Semiconductor with Embedded Metallic Glass Nano-Granules

High-throughput Screening of Ferrimagnetic Semiconductors with Ultrahigh Néel Temperature

Two-dimensional room temperature ferromagnetic semiconductors

Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices

Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure

Nanoengineering of an Si/MnGe Quantum Dot Superlattice for High Curie-temperature Ferromagnetism.

Magnetic oxide semiconductors

Two-dimensional monolayer CrGaS3: A ferromagnetic semiconductor with high Curie temperature and tunable magnetic anisotropy

Transparent Magnetic Semiconductors from Ferromagnetic Amorphous Alloys

Reversible 300K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor

First-principles study of bilayer hexagonal structure CrN2 nanosheets: A ferromagnetic semiconductor with high Curie temperature and tunable electronic properties

Realization of Robust and Ambient-Stable Room-Temperature Ferromagnetism in Wide Bandgap Semiconductor 2D Carbon Nitride Sheets.

A story of high-temperature ferromagnetism in semiconductors

Designing Magnetic Semiconductors From a Ferromagnetic Metallic Glass

High Curie Temperature Ferromagnetic Semiconductor: Bimetal Transition Iodide V$_2$Cr$_2$I$_9$