Room temperature ferromagnetic semiconductors through metal-semiconductor transition in monolayer MnSe2

Jia-Wen Li,Gang Su,Bo Gu

DOI: https://doi.org/10.1103/PhysRevB.109.134436

2023-12-23

Abstract:To realize room temperature ferromagnetic semiconductors is still a challenge in spintronics. Recent experiments have obtained two-dimensional (2D) room temperature ferromagnetic metals, such as monolayer MnSe2. In this paper, we proposed a way to obtain room temperature ferromagnetic semiconductors through metal-semiconductor transition. By the density functional theory calculations, a room temperature ferromagnetic semiconductor is obtained in monolayer MnSe2 with a few percent tensile strains, where a metal-semiconductor transition occurs with 2.2% tensile stain. The tensile stains raise the energy of d orbitals of Mn atoms and p orbitals of Se atoms near the Fermi level, making the Fermi level sets in the energy gap of bonding and antibonding states of these p and d orbitals, and opening a small band gap. The room temperature ferromagnetic semiconductors are also obtained in the heterostructures MnSe2/X (X = Al2Se3, GaSe, SiH, and GaP), where metal-semiconductor transition happens due to the tensile strains by interface of heterostructures. In addition, a large magneto-optical Kerr effect (MOKE) is obtained in monolayer MnSe2 with tensile strain and MnSe2-based heterostructures. Our theoretical results pave a way to obtain room temperature magnetic semiconductors from experimentally obtained 2D room temperature ferromagnetic metals through metal-semiconductor transitions.

Materials Science

What problem does this paper attempt to address?

The paper aims to address the issue of how to achieve ferromagnetic semiconductors at room temperature. Specifically, the authors propose a method to obtain room-temperature ferromagnetic semiconductors through a metal-semiconductor transition by studying the property changes of monolayer MnSe₂ material under different strain conditions. The paper points out that by applying approximately 2.2% tensile strain to monolayer MnSe₂, a transition from metal to semiconductor can be achieved, and this material exhibits ferromagnetism at room temperature. Additionally, the authors explore the heterostructures formed by MnSe₂ with other materials (such as MnSe₂/X, where X is Al₂Se₃, GaSe, SiH, and GaP) under the same conditions, which can also achieve similar transitions, further confirming the effectiveness of this method.

The main contribution of the paper is to provide a new approach, namely through strain engineering or constructing specific heterostructures, to achieve ferromagnetic semiconductors at room temperature, which is of great significance for the development of the spintronics field.